PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

Power Transistors

Power Transistors

isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION • Built-in Base-Emitter Shunt Resistors • High DC current gainhFE = 750 (Min) @ IC = -6A • Collector-Emitter Sustaining VoltageVCEO(SUS)= -80V(Min) • Complement to type 2N6058 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications.

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

COLLECTOR-EMITTER VOLTAGE

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

Bipolar PNP Device in a Hermetically sealed TO3

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 12A

Darlington PNP Silicon Power -80V to -100V, -12A

This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows

包装：散装 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER COMPLEMENTARY SILICON TRANSISTORS

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PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501