PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

Power Transistors

Power Transistors

Transistor, Bipolar, TO-3, PNP, 12 A, 100 V, 150 W

Description : A silicon PNP Darlington transistors in a TO-3 type case designed for general-purpose amplifier and low-frequency applications Features - High DC Current Gain - Collector-Emitter Sustaining Voltage : Vced(sus) = 100V Min @ 100mA -Monolithic Construction with Buit-in Base-Emitte

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

Darlington PNP Silicon Power -80V to -100V, -12A

This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows

12 A, 100 V PNP Darlington Bipolar Power Transistor

This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications. • High DC Current GainhFE = 3500 (Typ) @ IC = 5.0 Adc\n• Collector-Emitter Sustaining Voltage— @ 100 mAVCEO(sus) = 80 Vdc (Min)—2N6058100 Vdc (Min)—2N6052, 2N6059\n• Monolithic Construction with Built-In Base-Emitter Shunt Resistors\n• This is a Pb-Free Device;

Bipolar PNP Device in a Hermetically sealed TO3

文件：16.329 Kbytes Page：1 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS PNP DARL 100V 12A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：散装 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon PNP Darlingtion Power Transistor

文件：146.53 Kbytes Page：2 Pages

POWER COMPLEMENTARY SILICON TRANSISTORS

文件：80.97 Kbytes Page：3 Pages

Darlington Complementary Silicon Power Transistors

文件：130.66 Kbytes Page：8 Pages

Darlington Complementary Silicon Power Transistors

文件：149.78 Kbytes Page：7 Pages

Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) • M

2N6052. - 双极晶体管

Darlington Complementary Silicon Power Transistors

文件：149.78 Kbytes Page：7 Pages

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501