Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS PNP 80V 25A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-204 Tray

POWER TRANSISTORS(25A,200W)

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ HIGH CURRENT CAPABILITY APPLICATION

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell