N-Channel JFETs

[TAITRON] P-Channel Power MOSFETs N-Channel JFETs N-Channel Metal Can JFETs

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR 7.0 W - 175 MHz RF POWER TRANSISTOR NPN SILICON

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

7W / 20W / 40W, 28V, VHF POWER TRANSISTOR

Description: These SSM devices are epitaxial silicon NPN-planar transistors designed primarily for 12.5 volt AM class C rf amplifiers functional in the aviation band 118-136 MHz and for 28V FM class C rf amplifers utilized in ground station transmitters. These devices utilize ballasted emitter re

7W / 20W / 40W, 28V, VHF POWER TRANSISTOR

Description: These SSM devices are epitaxial silicon NPN-planar transistors designed primarily for 12.5 volt AM class C rf amplifiers functional in the aviation band 118-136 MHz and for 28V FM class C rf amplifers utilized in ground station transmitters. These devices utilize ballasted emitter re

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2N5642 is Designed for 28 V Large Signal Class C Amplifier Applications up to 175 MHz. FEATURES INCLUDE: • Emitter Ballasting • Gold Metalization • 3/8 SOE Stud Package

NPN SILICON RF POWER TRANSISROT

NPN SILICON RF POWER TRANSISRTOR . . . designed primarily for wideband large-signal amplifier stages in the 125-175 MHz frequency range.

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2N5643 is Designed for wideband large-signal amplifier stages in the 125 – 175 MHz range. FEATURES: • Minimum Gain = 7.6 dB • Output Power = 40 W • Omnigold™ Metalization System

7W / 20W / 40W, 28V, VHF POWER TRANSISTOR

Description: These SSM devices are epitaxial silicon NPN-planar transistors designed primarily for 12.5 volt AM class C rf amplifiers functional in the aviation band 118-136 MHz and for 28V FM class C rf amplifers utilized in ground station transmitters. These devices utilize ballasted emitter re

SI NPN POWER HF BJI

Description: Si NPN Power HF BJI

Trans GP BJT NPN 35V 1A 4-Pin Style M135

Trans GP BJT NPN 35V 3A 4-Pin Style M135

Trans GP BJT NPN 35V 5A 4-Pin Style M135