Amplifier Transistors

文件：71.63 Kbytes Page：6 Pages

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：管件 描述：TRANS NPN 140V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.

NPN EPITAXIAL SILICON TRANSISTOR

Amplifier Transistor • Collector-Emitter Voltage : VCEO = 140V • Collector Dissipation : PC(max) = 625mW

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications????

NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications.

NPN EPITAXIAL SILICON TRANSISTOR

Amplifier Transistor • Collector-Emitter Voltage : VCEO = 140V • Collector Dissipation : PC(max) = 625mW

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V • Low Leakage Current. : ICBO=100nA(Max.) VCB=100V • Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA • Low Noise : NF=10dB (Max.)

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：管件 描述：TRANS NPN 140V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个