2N542晶体管资料

  • 2N542(A)别名:2N542(A)三极管、2N542(A)晶体管、2N542(A)晶体三极管

  • 2N542(A)生产厂家:美国电子晶体管公司_美国得克萨斯仪表公司_美国晶体

  • 2N542(A)制作材料:Si-NPN

  • 2N542(A)性质:低频或音频放大 (LF)_射频/高频放大 (HF)

  • 2N542(A)封装形式:直插封装

  • 2N542(A)极限工作电压:30V

  • 2N542(A)最大电流允许值:0.025A

  • 2N542(A)最大工作频率:>10MHZ

  • 2N542(A)引脚数:3

  • 2N542(A)最大耗散功率:0.2W

  • 2N542(A)放大倍数

  • 2N542(A)图片代号:D-9

  • 2N542(A)vtest:30

  • 2N542(A)htest:10000100

  • 2N542(A)atest:0.025

  • 2N542(A)wtest:0.2

  • 2N542(A)代换 2N542(A)用什么型号代替:BC168,BC183,BC238,BC382,BC547,BC548,BC582,3DG110C,

型号 功能描述 生产厂家 企业 LOGO 操作
2N542

TRANSITRON

General Description This transistor is a NPN silicon triode transistor designed primarily for low level, IF and RF amplifier applications in the Audio & RF frequency range for industrial service.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

SERIES 2N TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

ETCList of Unclassifed Manufacturers

未分类制造商

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

ETCList of Unclassifed Manufacturers

未分类制造商

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

ETCList of Unclassifed Manufacturers

未分类制造商

SFET RF,VHF, UHF, Amplitiers

N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50.

Fairchild

仙童半导体

Power Transistors

Power Transistors TO-66 Case

Central

isc Silicon NPN Power Transistor

DESCRIPTION • Contunuous Collector Current-IC= 7A • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A • Wide Area of Safe Operation APPLICATIONS • Designed for switching and wide-band amplifier applications.

ISC

无锡固电

POWER TRANSISTORS(7A,40W)

7 AMPERE POWER TRANSISTORS NPN SILICON 80-100 VOLTS 40 WATTS

MOSPEC

统懋

Silicon NPN Power Transistor

DESCRIPTION • Contunuous Collector Current-IC= 7A • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A • Wide Area of Safe Operation APPLICATIONS • Designed for switching and wide-band amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For switching and wide-band amplifier applications.

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO66

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 80V IC = 7A

SEME-LAB

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage : VCE(sat)=1.2V(Max)@IC=7A • Excellent safe operating areas APPLICATIONS • Designed for switching and wide-band amplifier applications

SAVANTIC

Contunuous Collector Current-IC= 7A

DESCRIPTION • Contunuous Collector Current-IC= 7A • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A • Wide Area of Safe Operation APPLICATIONS • Designed for switching and wide-band amplifier applications.

ISC

无锡固电

COLLECTOR EMITTER VOLTAGE

Silicon NPN Power Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER TRANSISTORS(7A,40W)

7 AMPERE POWER TRANSISTORS NPN SILICON 80-100 VOLTS 40 WATTS

MOSPEC

统懋

Power Transistors

Power Transistors TO-66 Case

Central

Power Transistors

Power Transistors TO-66 Case

Central

POWER TRANSISTORS(7A,40W)

7 AMPERE POWER TRANSISTORS NPN SILICON 80-100 VOLTS 40 WATTS

MOSPEC

统懋

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For switching and wide-band amplifier applications.

SAVANTIC

COLLECTOR EMITTER VOLTAGE

Silicon NPN Power Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SI NPN LO-PWR BJT

Description: Si NPN Lo-Pwr BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar Junction Transistors

TTELEC

Silicon NPN Power Transistors

文件:117.16 Kbytes Page:3 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO66

文件:16.09 Kbytes Page:1 Pages

SEME-LAB

PNP Transistor

Microchip

微芯科技

Silicon NPN Power Transistors

文件:148.74 Kbytes Page:4 Pages

SAVANTIC

包装:散装 描述:NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

Bipolar Junction Transistors

ETC

知名厂家

MEDIUM POWER NPN SILICON

文件:23.73 Kbytes Page:2 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO66

文件:15.16 Kbytes Page:1 Pages

SEME-LAB

包装:散装 描述:NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

Silicon NPN Power Transistors

文件:117.16 Kbytes Page:3 Pages

SAVANTIC

isc Silicon NPN Power Transistor

文件:49.52 Kbytes Page:2 Pages

ISC

无锡固电

2N542产品属性

  • 类型

    描述

  • 型号

    2N542

  • 功能描述

    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5

更新时间:2025-11-2 15:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
24+
TO-66
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
MOTOROLA/摩托罗拉
2023+
MODULE
342
主打螺丝模块系列
S
24+
2
MOTOROLA/摩托罗拉
20+
TO-66
67500
原装优势主营型号-可开原型号增税票
MOT
0425+
TO-66
400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MOT
24+
CAN3
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
MOTOROLA
专业铁帽
CAN3
5500
原装铁帽专营,代理渠道量大可订货
MOT
24+
CAN3
6540
原装现货/欢迎来电咨询
ST
2511
CAN to-39
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
25+
CAN to-39
16900
原装,请咨询

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