MEDIUM POWER NPN SILICON

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Bipolar Junction Transistors

Contunuous Collector Current-IC= 7A

DESCRIPTION • Contunuous Collector Current-IC= 7A • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A • Wide Area of Safe Operation APPLICATIONS • Designed for switching and wide-band amplifier applications.

POWER TRANSISTORS(7A,40W)

7 AMPERE POWER TRANSISTORS NPN SILICON 80-100 VOLTS 40 WATTS

Power Transistors

Power Transistors TO-66 Case

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage : VCE(sat)=1.2V(Max)@IC=7A • Excellent safe operating areas APPLICATIONS • Designed for switching and wide-band amplifier applications

Bipolar NPN Device in a Hermetically sealed TO66

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