2N501晶体管资料

  • 2N501(A,/18)别名:2N501(A,/18)三极管、2N501(A,/18)晶体管、2N501(A,/18)晶体三极管

  • 2N501(A,/18)生产厂家:CSR_美国电子晶体管公司_美国史普拉各电气公司_SYL

  • 2N501(A,/18)制作材料:Ge-PNP

  • 2N501(A,/18)性质:开关管 (S)

  • 2N501(A,/18)封装形式:直插封装

  • 2N501(A,/18)极限工作电压:15V

  • 2N501(A,/18)最大电流允许值:0.2A

  • 2N501(A,/18)最大工作频率:<1MHZ或未知

  • 2N501(A,/18)引脚数:3

  • 2N501(A,/18)最大耗散功率:0.15W

  • 2N501(A,/18)放大倍数

  • 2N501(A,/18)图片代号:C-18

  • 2N501(A,/18)vtest:15

  • 2N501(A,/18)htest:999900

  • 2N501(A,/18)atest:0.2

  • 2N501(A,/18)wtest:0.15

  • 2N501(A,/18)代换 2N501(A,/18)用什么型号代替:ASZ21,2N960,2N961,2N962,2N963,2N964,2N965,2N966,2N967,2N705(A),2N2635,2N2955,2N2956,2N2957,3AK8,

型号 功能描述 生产厂家 企业 LOGO 操作

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

NPN TRANSISTOR

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SI NPN POWER BJT

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON NPN POWER TRANSISTOR

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

0.5 AMP 800 - 1000 Volts NPN Transistor

FEATURES: • BVCER and BVCEO to 1000 volts • Low Saturation Voltage • Low Leakage at High Temperature • High Gain, Low Saturation • 200° C Operating, Gold Eutectic Die Attach • 2N5010 thru 2N5012 Also Available, Contact Factory • TX, TXV, and S-Level Screening Available

SSDI

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH VOLTAGE NPN TRANSISTOR

FEATURES ● BACER AND BVCBO TO 1000 VOLTS ● LOW SATURATION VOLTAGE ● LOW LEAKAGE AT HIGH TMEPERATURE ● 200°C OPERATING, GOLD EUTECTIC DIE ATTACH ● 2N5010 THRU 2N5012 ALSO AVAILIABLE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

0.5 AMP 800 - 1000 Volts NPN Transistor

FEATURES: • BVCER and BVCEO to 1000 volts • Low Saturation Voltage • Low Leakage at High Temperature • High Gain, Low Saturation • 200° C Operating, Gold Eutectic Die Attach • 2N5010 thru 2N5012 Also Available, Contact Factory • TX, TXV, and S-Level Screening Available

SSDI

HIGH VOLTAGE NPN TRANSISTOR

FEATURES ● BACER AND BVCBO TO 1000 VOLTS ● LOW SATURATION VOLTAGE ● LOW LEAKAGE AT HIGH TMEPERATURE ● 200°C OPERATING, GOLD EUTECTIC DIE ATTACH ● 2N5010 THRU 2N5012 ALSO AVAILIABLE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON EPITAXIAL NPN TRANSISTOR

FEATURES General purpose power transistor for switching and linear applications in a hermetic TO–39 package.

SEME-LAB

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

0.5 AMP 800 - 1000 Volts NPN Transistor

FEATURES: • BVCER and BVCEO to 1000 volts • Low Saturation Voltage • Low Leakage at High Temperature • High Gain, Low Saturation • 200° C Operating, Gold Eutectic Die Attach • 2N5010 thru 2N5012 Also Available, Contact Factory • TX, TXV, and S-Level Screening Available

SSDI

HIGH VOLTAGE NPN TRANSISTOR

FEATURES ● BACER AND BVCBO TO 1000 VOLTS ● LOW SATURATION VOLTAGE ● LOW LEAKAGE AT HIGH TMEPERATURE ● 200°C OPERATING, GOLD EUTECTIC DIE ATTACH ● 2N5010 THRU 2N5012 ALSO AVAILIABLE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

Microsemi

美高森美

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

ETCList of Unclassifed Manufacturers

未分类制造商

SI NPN POWER HF BJT

Description: Si NPN Power HF BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-CHANNEL JFETS

p-channel JFETs designed for .... ■ Analog Switches ■ Commutators ■ Choppers BENEFITS ● Low Insertion Loss RDS(on)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SINGLE P-CHANNEL JFET SWITCH

FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75Ω

LINEAR

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

Intersil

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

Intersil

SINGLE P-CHANNEL JFET SWITCH

FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75Ω

LINEAR

P-CHANNEL JFETS

p-channel JFETs designed for .... ■ Analog Switches ■ Commutators ■ Choppers BENEFITS ● Low Insertion Loss RDS(on)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

a single P-Channel JFET switch

The 2N5019 is a single P-Channel JFET switch Linear Systems replaces discontinued Siliconix 2N5019 This p-channel analog switch is designed to provide low on-resistance and fast switching. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications

MICROSS

a single P-Channel JFET switch

The 2N5019 is a single P-Channel JFET switch Linear Systems replaces discontinued Siliconix 2N5019 This p-channel analog switch is designed to provide low on-resistance and fast switching. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications

MICROSS

a single P-Channel JFET switch

The 2N5019 is a single P-Channel JFET switch Linear Systems replaces discontinued Siliconix 2N5019 This p-channel analog switch is designed to provide low on-resistance and fast switching. The TO-92 provides a low cost option and ease of manufacturing. FEATURES DIRECT REPLACEMENT FOR SILIC

MICROSS

SILICON EPITAXIAL NPN TRANSISTOR

文件:13.75 Kbytes Page:1 Pages

SEME-LAB

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

封装/外壳:TO-205AD,TO-39-3 金属罐 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

封装/外壳:3-SMD,无引线 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

NPN Silicon Switching 400V to 760V, 0.2A

Microchip

微芯科技

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

Bipolar NPN Device

文件:11.12 Kbytes Page:1 Pages

SEME-LAB

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

文件:11.12 Kbytes Page:1 Pages

SEME-LAB

NPN Silicon Switching 400V to 760V, 0.2A

Microchip

微芯科技

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

0.5AMP HIGH VOLTAGE NPN TRANSISTOR 450 VOLTS

文件:284.44 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Bipolar NPN Device

文件:11.96 Kbytes Page:1 Pages

SEME-LAB

NPN Transistor

Microchip

微芯科技

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

NPN SILICON TRANSISTOR

文件:60.57 Kbytes Page:4 Pages

Microsemi

美高森美

0.5AMP HIGH VOLTAGE NPN TRANSISTOR 450 VOLTS

文件:284.44 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON EPITAXIAL NPN TRANSISTOR

文件:36.15 Kbytes Page:1 Pages

SEME-LAB

SILICON EPITAXIAL NPN TRANSISTOR

文件:36.15 Kbytes Page:1 Pages

SEME-LAB

2N501产品属性

  • 类型

    描述

  • 型号

    2N501

  • 制造商

    Microsemi Corporation

  • 功能描述

    TRANS GP BJT NPN 500V 0.5A 3PIN TO-5 - Bulk

更新时间:2025-12-25 14:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NJS
22+
20000
公司只有原装 品质保证
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
NJS
15+
82
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MOT
24+
CAN3
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
NJS
2023+
8800
正品渠道现货 终端可提供BOM表配单。
rca
25+
500000
行业低价,代理渠道
MOTOROLA
CAN
1797
专营铁帽CANCDIP
MOT
24+
CAN3
6540
原装现货/欢迎来电咨询
MOTOROLA
24+
CAN3
1200
原装现货假一罚十
MOTOROLA/摩托罗拉
23+
CAN3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详

2N501数据表相关新闻