0.5 AMP 800 - 1000 Volts NPN Transistor

FEATURES: • BVCER and BVCEO to 1000 volts • Low Saturation Voltage • Low Leakage at High Temperature • High Gain, Low Saturation • 200° C Operating, Gold Eutectic Die Attach • 2N5010 thru 2N5012 Also Available, Contact Factory • TX, TXV, and S-Level Screening Available

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

HIGH VOLTAGE NPN TRANSISTOR

FEATURES ● BACER AND BVCBO TO 1000 VOLTS ● LOW SATURATION VOLTAGE ● LOW LEAKAGE AT HIGH TMEPERATURE ● 200°C OPERATING, GOLD EUTECTIC DIE ATTACH ● 2N5010 THRU 2N5012 ALSO AVAILIABLE

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

封装/外壳：TO-205AA，TO-5-3 金属罐 包装：散装 描述：TRANS NPN 800V 0.2A TO5 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON TRANSISTOR

文件：60.57 Kbytes Page：4 Pages

0.5AMP HIGH VOLTAGE NPN TRANSISTOR 450 VOLTS

文件：284.44 Kbytes Page：6 Pages

Bipolar NPN Device

文件：11.96 Kbytes Page：1 Pages

NPN Transistor

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727

NPN SILICON TRANSISTOR

文件：60.57 Kbytes Page：4 Pages

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：卷带（TR） 描述：TRANS NPN 800V 0.2A TO39 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个