位置：首页 > IC中文资料第587页 > 2N4403R
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N4403R | Plastic-Encapsulate MOSFET FEATURES Power dissipation | GWSEMI 唯圣电子 |   | |
PNP EXPITAXIAL SILICON TRANSISTOR? PNP EXPITAXIAL SILICON TRANSISTOR General purpose transistor | SEMTECH 先之科 | | ||
PNP General Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. | Fairchild 仙童半导体 | | ||
PNP General Purpose Amplifier Features • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | | ||
SMALL SIGNAL TRANSISTORS (PNP) 文件：98.27 Kbytes Page：3 Pages | GE | | ||
General Purpose Transistors(PNP Silicon) 文件：297.77 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP silicon planar epitaxial transistor Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP silicon planar epitaxial transistor Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP silicon planar epitaxial transistor Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP silicon planar epitaxial transistor Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP silicon planar epitaxial transistor Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP silicon planar epitaxial transistor Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：管件 描述：TRANS PNP 40V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
包装：散装 描述：TRANS PNP 40V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP Silicon 文件：118.38 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP Silicon 文件：118.38 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP Silicon 文件：118.38 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP Silicon 文件：118.38 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
General Purpose Transistors PNP Silicon 文件：118.38 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | |
2N4403R产品属性
- 类型
描述
- 型号
2N4403R
- 功能描述
两极晶体管 - BJT TO-92
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO-92 |
5850 |
全新原装现货 |
|||
FAIRCHILD/仙童 |
2223+ |
TO-92L |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON |
25+ |
TO-92 |
7990 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
mot |
25+ |
500000 |
行业低价,代理渠道 |
||||
ON(安森美) |
2021/2022+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON |
2023+ |
TO-92 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
8250 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHI |
24+ |
TO-92L |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
FAIRCHILD |
TO-92L |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2N4403R规格书下载地址
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2N4403R数据表相关新闻
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DdatasheetPDF页码索引
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