General Purpose Transistors

PNP silicon planar epitaxial transistor Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc

General Purpose Transistors PNP Silicon

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包装：散装 描述：TRANS PNP 40V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistors

PNP silicon planar epitaxial transistor Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：管件 描述：TRANS PNP 40V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistors PNP Silicon

文件：118.38 Kbytes Page：7 Pages

PNP EXPITAXIAL SILICON TRANSISTOR?

PNP EXPITAXIAL SILICON TRANSISTOR General purpose transistor

PNP General Purpose Amplifier

Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA.

General Purpose Transistors(PNP Silicon)

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SMALL SIGNAL TRANSISTORS (PNP)

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PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N4403 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4401 • High Power Dissipation : 625mW at 25°C • High DC Current Gain : 100-300 at 150mA • High Breakdown Voltage : 40V Min.