General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon

NPN EXPITAXIAL SILICON TRANSISTOR

General Purpose Transistor Collector Emitter Voltage: VCEO = 40V Collector Dissiption: Pc(max) = 625mW

NPN General Purpose Amplifier

Small Signal General Purpose Amplifiers & Switchs

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistors General Purpose Transistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped

Small Signal Transistors

Small Signal Transistors

NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS

2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Small Signal General Purpose Transistors (NPN)

Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications

NPN Plastic Encapsulated Transistor

FEATURES • General Purpose Amplifier Transistor

NPN General Purpose Amplifier

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN SILICON ANNULAR TRANSISTORS

NPN SILICON ANNULAR TRANSISTORS

NPN General Purpose Transistor

NPN General Purpose Transistor

Amplifiers & Switches

Amplifiers & Switches Bipolar: General Purpose

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC (max) = 625 mW On special request, these transistors can be manufactured in different pin configurations.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • General Purpose Amplifier Transistor

TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Amplifier Transistor

TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Amplifier Transistor

TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Amplifier Transistor

NPN General-Purpose Amplifier

Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

General Purpose Transistor

General Purpose Transistor

TRANSISTOR (NPN)

FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Amplifiers & Switches

Amplifiers & Switches Bipolar: General Purpose

NPN SILICON ANNULAR TRANSISTORS

NPN SILICON ANNULAR TRANSISTORS

General purpose application

Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with 2N4403

General Purpose Switching Transistors

Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP.

General Purpose Si-Epitaxial Planar Transistors

Si-Epitaxial PlanarTransistors General Purpose Transistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped

NPN General Purpose Amplifier

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 600mWatts of Power Dissipation • Through Hole Package • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:Type number

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA.

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to 2N4403. • High Power Dissipation : 625 mW at 25°C • High DC Current Gain : 100-300 at 150mA • High Breakdown Voltage : 40 V Min.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose switching and amplifier applications.

NPN SiliconGeneral Purpose Transistors

FEATURES Power dissipation PCM : 0.625 W （T amb=25℃） Collector current ICM:0.6A Collector-base voltage V(BR)CBO : 60V Operating and storage junction temperature range TJ , Tstg: -55°C +150°C

General Purpose Transistors

General Purpose Transistors NPN Silicon

NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS

2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

NPN Medium Power Transistor (Switching)

• Features 1) BVCEO>40V (IC=1mA) 2) Complements the UMT4403 / SST4403 / MMST4403 / PN4403.

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 40 Volts POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • Complimentary (PNP) device:2N4403 • Pb free product are available :99 Sn above can meet RoHS environment substance directive

General Purpose Switching Transistors

[multicomp] Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP.

Small Signal General Purpose Transistors (NPN)

Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications

NPN Transistor Plastic-Encapsulate Transi stors

Features Power Dissipation

TO-92 Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistors General Purpose Transistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped

SMALL SIGNAL TRANSISTORS NPN

FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor 2N4403 is recommended. ♦ On special request, this transistor is also manufactured in the pin configuration TO-18. ♦ This transistor is also available

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN General Purpose Amplifier

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon

NPN switching transistor

DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4403. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Industrial and consumer switching applications.

NPN EXPITAXIAL SILICON TRANSISTOR

General Purpose Transistor Collector Emitter Voltage: VCEO = 40V Collector Dissiption: Pc(max) = 625mW

NPN Medium Power Transistor

• Features 1) BVCEO>40V (IC=1mA) 2) Complements the UMT4403 / SST4403 / MMST4403 / PN4403.

NPN General-Purpose Amplifier

Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

NPN General-Purpose Amplifier

Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA.

Plastic-Encapsulate Transistors

FEATURES Power dissipation

General Purpose Transistors

General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to the 2N4403SC