2N4401晶体管资料
2N4401别名:2N4401三极管、2N4401晶体管、2N4401晶体三极管
2N4401生产厂家:美国、法国费兰第有限公司_美国摩托罗拉半导体公司_
2N4401制作材料:Si-NPN
2N4401性质:通用型 (Uni)
2N4401封装形式:直插封装
2N4401极限工作电压:60V
2N4401最大电流允许值:0.6A
2N4401最大工作频率:<1MHZ或未知
2N4401引脚数:3
2N4401最大耗散功率:0.625W
2N4401放大倍数:β>100
2N4401图片代号:A-31
2N4401vtest:60
2N4401htest:999900
- 2N4401atest:0.6
2N4401wtest:0.625
2N4401代换 2N4401用什么型号代替:BC337A,BC637,BC639,2N2221(A),2N2222(A),
2N4401价格
参考价格:¥0.0967
型号:2N4401 品牌:MULTICOMP 备注:这里有2N4401多少钱,2026年最近7天走势,今日出价,今日竞价,2N4401批发/采购报价,2N4401行情走势销售排行榜,2N4401报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:2N4401;NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | ONSEMI 安森美半导体 | |||
丝印代码:2N4401;NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | ONSEMI 安森美半导体 | |||
丝印代码:2N4401;NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | ONSEMI 安森美半导体 | |||
丝印代码:2N4401;NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | ONSEMI 安森美半导体 | |||
丝印代码:2N4401;NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | ONSEMI 安森美半导体 | |||
2N4401 | General Purpose Switching Transistors Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP. | MULTICOMP 易络盟 | ||
2N4401 | 丝印代码:2X;General Purpose Transistor General Purpose Transistor | FS | ||
2N4401 | NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | ONSEMI 安森美半导体 | ||
2N4401 | Amplifiers & Switches Amplifiers & Switches Bipolar: General Purpose | AMMSEMI | ||
2N4401 | TRANSISTOR (NPN) FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | ||
2N4401 | NPN SILICON ANNULAR TRANSISTORS NPN SILICON ANNULAR TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
2N4401 | General purpose application Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with 2N4403 | KODENSHI 可天士 | ||
2N4401 | General Purpose Transistors(NPN Silicon) General Purpose Transistors NPN Silicon | ONSEMI 安森美半导体 | ||
2N4401 | NPN switching transistor DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4403. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Industrial and consumer switching applications. | PHILIPS 飞利浦 | ||
2N4401 | NPN EXPITAXIAL SILICON TRANSISTOR General Purpose Transistor Collector Emitter Voltage: VCEO = 40V Collector Dissiption: Pc(max) = 625mW | SEMTECH 先之科 | ||
2N4401 | NPN Medium Power Transistor • Features 1) BVCEO>40V (IC=1mA) 2) Complements the UMT4403 / SST4403 / MMST4403 / PN4403. | ROHM 罗姆 | ||
2N4401 | NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | FAIRCHILD 仙童半导体 | ||
2N4401 | SMALL SIGNAL TRANSISTORS NPN FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor 2N4403 is recommended. ♦ On special request, this transistor is also manufactured in the pin configuration TO-18. ♦ This transistor is also available | GE | ||
2N4401 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR NPN SILICON PLANAR EPITAXIAL TRANSISTOR | MICRO-ELECTRONICS | ||
2N4401 | Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistors General Purpose Transistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped | DIOTEC 德欧泰克 | ||
2N4401 | TO-92 Plastic-Encapsulated Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | ||
2N4401 | General Purpose Transistors General Purpose Transistors NPN Silicon | ONSEMI 安森美半导体 | ||
2N4401 | NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL | ||
2N4401 | Small Signal Transistors TO-92 Case (Continued) DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER | CENTRAL | ||
2N4401 | NPN Medium Power Transistor (Switching) • Features 1) BVCEO>40V (IC=1mA) 2) Complements the UMT4403 / SST4403 / MMST4403 / PN4403. | ROHM 罗姆 | ||
2N4401 | NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • Complimentary (PNP) device:2N4403 • Pb free product are available :99 Sn above can meet RoHS environment substance directive | PANJIT 強茂 | ||
2N4401 | General Purpose Switching Transistors [multicomp] Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP. | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
2N4401 | Small Signal General Purpose Transistors (NPN) Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications | TAITRON | ||
2N4401 | NPN Transistor Plastic-Encapsulate Transi stors Features Power Dissipation | SECOS 喜可士 | ||
2N4401 | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. | DCCOM 道全 | ||
2N4401 | NPN SiliconGeneral Purpose Transistors FEATURES Power dissipation PCM : 0.625 W (T amb=25℃) Collector current ICM:0.6A Collector-base voltage V(BR)CBO : 60V Operating and storage junction temperature range TJ , Tstg: -55°C +150°C | WEITRON | ||
2N4401 | NPN EPITAXIAL PLANAR TRANSISTOR Description The 2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to 2N4403. • High Power Dissipation : 625 mW at 25°C • High DC Current Gain : 100-300 at 150mA • High Breakdown Voltage : 40 V Min. | TGS | ||
2N4401 | NPN General Purpose Amplifier Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 600mWatts of Power Dissipation • Through Hole Package • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:Type number | MCC | ||
2N4401 | NPN GENERAL PURPOSE AMPLIFIER ■ DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. | UTC 友顺 | ||
2N4401 | General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial PlanarTransistors General Purpose Transistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped | DIOTEC 德欧泰克 | ||
2N4401 | NPN通用放大器 文件:33.566 Kbytes Page:2 Pages | |||
2N4401 | Low Power Bipolar Transistors 文件:254.17 Kbytes Page:7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
2N4401 | Small Signal General Purpose Amplifiers & Switchs 文件:316.65 Kbytes Page:9 Pages | FAIRCHILD 仙童半导体 | ||
2N4401 | NPN GENERAL PURPOSE AMPLIFIER 文件:212.75 Kbytes Page:6 Pages | UTC 友顺 | ||
2N4401 | General Purpose Transistors 文件:200.71 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
2N4401 | NPN General Purpose Amplifier 文件:86 Kbytes Page:4 Pages | MCC | ||
2N4401 | NPN General Purpose Amplifier 文件:218.45 Kbytes Page:4 Pages | MCC | ||
2N4401 | General Purpose Transistors NPN Silicon 文件:131.15 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
2N4401 | NPN General Pupose Amplifier 文件:93.3 Kbytes Page:7 Pages | FAIRCHILD 仙童半导体 | ||
2N4401 | TO-92 Plastic-Encapsulate Transistors 文件:201.01 Kbytes Page:5 Pages | JIANGSU 长电科技 | ||
2N4401 | General Purpose NPN Transistors 文件:148.73 Kbytes Page:2 Pages | DIOTEC 德欧泰克 | ||
2N4401 | SILICON NPN TRANSISTORS 文件:707.01 Kbytes Page:4 Pages | CENTRAL | ||
2N4401 | Silicon NPN transistor in a TO-92 Plastic Package 文件:933.85 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | ||
2N4401 | TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件:442.97 Kbytes Page:6 Pages | RECTRON 丽正 | ||
2N4401 | Plastic-Encapsulated Multiple Transistors ??Quad Surface Mount (Case 751B-SO-16) ??NPN/PNP) 文件:53.1 Kbytes Page:1 Pages | ALLIED | ||
2N4401 | TRANSISTOR (NPN) 文件:506.81 Kbytes Page:2 Pages | KOOCHIN 灏展电子 | ||
2N4401 | isc Silicon NPN Power Transistor 文件:334.61 Kbytes Page:2 Pages | ISC 无锡固电 | ||
2N4401 | Bipolar Transistor | UTC 友顺 | ||
2N4401 | Bipolar Transistors | DIOTEC 德欧泰克 | ||
2N4401 | 晶体管 | JSCJ 长晶科技 | ||
NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | ONSEMI 安森美半导体 | |||
This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | FAIRCHILD 仙童半导体 | |||
NPN GENERAL PURPOSE AMPLIFIER ■ DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. | UTC 友顺 | |||
NPN GENERAL PURPOSE AMPLIFIER ■ DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. | UTC 友顺 | |||
Plastic-Encapsulate Transistors FEATURES Power dissipation | GWSEMI 唯圣电子 |
2N4401产品属性
- 类型
描述
- PCM(W):
0.625
- IC(A):
0.6
- VCBO(V):
60
- VCEO(V):
40
- VEBO(V):
6
- hFEMin:
100
- hFEMax:
300
- hFE@VCE(V):
1
- hFE@IC(A):
0.15
- VCE(sat)(V):
0.75
- VCE(sat)\u001E@IC(A):
0.5
- VCE(sat)\u001E@IB(A):
0.05
- Package:
TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
24+ |
N/A |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ON/安森美 |
25+ |
SMD |
20000 |
原装 |
|||
ON/安森美 |
25+ |
TO-92(TO-92-3) |
30000 |
原装正品公司现货,假一赔十! |
|||
FAIRCHI |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
FSC |
TO-92 |
50000 |
|||||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FAIRCHILD |
25+23+ |
TO92 |
76283 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ONSEMI/安森美 |
2450+ |
TO-92-3 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
FAIRCHILD/仙童 |
2223+ |
TO-92 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON/安森美 |
21+ |
TO-92(TO-92-3) |
8080 |
只做原装,质量保证 |
2N4401芯片相关品牌
2N4401规格书下载地址
2N4401参数引脚图相关
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2N4401数据表相关新闻
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DdatasheetPDF页码索引
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