丝印代码：2N3904；TO-92 Plastic-Encapsulate Transistors

Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904

丝印代码：2N3904；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

丝印代码：2N3904；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

丝印代码：2N3904；TO-92 Plastic-Encapsulate Transistors

Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904

丝印代码：2N3904；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

丝印代码：2N3904；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

丝印代码：2N3904；NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

丝印代码：2N3906；T0-92 Plastic-Encapsulate Transistors

FEATURE § ® PNP silicon epitaxial planar transistor for switching and Amplifier applications ® As complementary type, the NPN transistor 2N3904 is Recommended ® This transistor is also available in the SOT-23 case with the type designation MMBT3906

丝印代码：2N3906；PNP General-Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

丝印代码：2N3906；General Purpose Transistor

Features - PNP silicon epitaxial planar transistor for switching and amplifier applications.

丝印代码：2N3906；PNP General-Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

丝印代码：2N3906；PNP General-Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

丝印代码：2N3906；PNP General-Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

丝印代码：2N3906；PNP General-Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

HIGH VOLTAGE NPN SILICON TRANSISTORS

HIGH VOLTAGE NPN SILICON TRANSISTORS 3.5 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 100 WATTS

NPN High Power Silicon Transistors

Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371 • TO-3 (TO-204AA) Package

isc Silicon NPN Power Transistor

DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose switching and amplifier applications

NPN HIGH POWER SILICON TRANSISTOR

NPN HIGH POWER SILICON TRANSISTOR

SI NPN POWER BJT, I(C) = 2.5A TO 4.9A

NPN HIGH POWER SILICON TRANSISTOR

Bipolar NPN Device in a Hermetically sealed TO3

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 400V IC = 2.5A

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations.

Amplifiers & Switches

Amplifiers & Switches Bipolar: General Purpose

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications

NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS

TO-92 Plastic Package General Purpose Switching And Amplifier Applications

Small Signal Transistors

Small Signal Transistors

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906. MARKING: FULL PART NUMBER

Si-Epitaxial PlanarTransistors

NPN Si-Epitaxial PlanarTransistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

npn epitaxial silicon transistor

GENERAL PURPOSE TRANSISTORS ● Collector-Emitter Voltage: VCEO = 40V ● Collector Dissipation: Pc(max) = 625mW

General Purpose Transistors

Features • Pb−Free Packages are Available*

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.

General Purpose Transistors

Features • Pb−Free Packages are Available*

General Purpose Transistors

Features • Pb−Free Packages are Available*

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available*

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

NPN General Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

General Purpose Transistors

Features • Pb−Free Packages are Available*

NPN switching transistor

NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906. 1. Low current (max. 200 mA) 2. Low voltage (max. 40 V).

NPN GENERAL PURPOSE AMPLIFIER

FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906

NPN General - Purpose Amplifier

Description This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Si-Epitaxial PlanarTransistors

NPN Si-Epitaxial PlanarTransistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

Si-Epitaxial-Planar Switching Transistors

NPN Si-Epitaxial PlanarTransistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906. MARKING: FULL PART NUMBER

NPN General Purpose Amplifier

Features • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

NPN Silicon Transistor (General small signal application)

Descriptions • General small signal application • Switching application Features • Low collector saturation voltage : VCE(sat)=0.3V(MAX.) @ IC=50mA, IB=5mA • Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz • Complementary pair with STA3906A

NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS

TO-92 Plastic Package General Purpose Switching And Amplifier Applications

Small Signal Transistors

Small Signal Transistors

NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● NPN silicon epitaxial planar transistor for switching and Amplifier applications ● As complementary type, the PNP transistor 2N3906 is Recommended ● This transistor is also available in the SOT-23 case with the type designation MMBT3904

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose switching and amplifier applications. Pinning 1 = Emitter 2 = Base 3 = Collector

NPN Transistor

Features: •NPN silicon planar switching transistors •Fast switching devices exhibiting short turn-off and low saturation voltage characteristics •General purpose switching and amplifier applications

General Purpose Transistors NPN TO-92

Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • General purpose Switching and Amplifier Applications.

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

NPN General Purpose Transistor

Features 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN Silicon Transistor

Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3906

isc Silicon NPN Power Transistor

DESCRIPTION • Low Saturation Voltage- : VCE(sat)= 200mV(Max)@ IC =10mA • Complement to Type 2N3906. APPLICATIONS • Designed for high-speed switching and Amplifier applications.