2N39晶体管资料

  • 2N39别名:2N39三极管、2N39晶体管、2N39晶体三极管

  • 2N39生产厂家:CBS

  • 2N39制作材料:Ge-PNP

  • 2N39性质:低频或音频放大 (LF)_开关管 (S)_CF_射频/高频

  • 2N39封装形式:直插封装

  • 2N39极限工作电压:30V

  • 2N39最大电流允许值:0.008A

  • 2N39最大工作频率:<1MHZ或未知

  • 2N39引脚数:3

  • 2N39最大耗散功率:0.05W

  • 2N39放大倍数

  • 2N39图片代号:D-161

  • 2N39vtest:30

  • 2N39htest:999900

  • 2N39atest:.008

  • 2N39wtest:.05

  • 2N39代换 2N39用什么型号代替:AC122,AC125,AC126,AC151,ASY26,ASY26,2N1191,2N1192,2N1193,2N1194,3AX51B,

2N39价格

参考价格:¥30.1320

型号:2N3902 品牌:MULTICOMP 备注:这里有2N39多少钱,2024年最近7天走势,今日出价,今日竞价,2N39批发/采购报价,2N39行情走势销售排行榜,2N39报价。
型号 功能描述 生产厂家&企业 LOGO 操作

HIGHVOLTAGENPNSILICONTRANSISTORS

HIGHVOLTAGENPNSILICONTRANSISTORS 3.5AMPEREPOWERTRANSISTORSNPNSILICON400VOLTS100WATTS

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

BipolarNPNDeviceinaHermeticallysealedTO3

BipolarNPNDeviceinaHermeticallysealedTO3MetalPackage. BipolarNPNDevice. VCEO=400V IC=2.5A

SEME-LAB

Seme LAB

SEME-LAB

NPNHighPowerSiliconTransistors

Features •AvailableinJAN,JANTX,JANTXVperMIL-PRF-19500/371 •TO-3(TO-204AA)Package

MA-COM

M/A-COM Technology Solutions, Inc.

MA-COM

NPNHIGHPOWERSILICONTRANSISTOR

NPNHIGHPOWERSILICONTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SINPNPOWERBJT,I(C)=2.5ATO4.9A

NPNHIGHPOWERSILICONTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconNPNPowerTransistor

DESCRIPTION ·ExcellentSafeOperatingArea ·LowCollector-EmitterSaturationVoltage ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation. APPLICATIONS ·Designedforgeneral-purposeswitchingandamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONPLANAREPITAXIALSWITCHINGTRANSISTORS

TO-92PlasticPackage GeneralPurposeSwitchingAndAmplifierApplications

CDIL

CDIL

CDIL

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors2N3905and2N3906arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

Amplifiers&Switches

Amplifiers&Switches Bipolar:GeneralPurpose

AMMSEMI

American Microsemiconductor

AMMSEMI

GeneralPurposeTransistors

Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3903and2N3904typesareNPNsilicontransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N3905and2N3906. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPNGeneralPurposeAmplifier

NPNGeneralPurposeAmplifier Thisdeviceisdesignedforuseasgeneralpurposeamplifiersandswitchesrequiringcollectorcurrentsto100mA.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNSiliconExpitaxialPlanarTransistorforswitchingandamplifierapplications

SEMTECH

Semtech Corporation

SEMTECH

GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

npnepitaxialsilicontransistor

GENERALPURPOSETRANSISTORS ●Collector-EmitterVoltage:VCEO=40V ●CollectorDissipation:Pc(max)=625mW

SamsungSamsung Group

三星三星半导体

Samsung

NPNSILICONPLANAREPITAXIALTRANSISTORS

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

Si-EpitaxialPlanarTransistors

NPNSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec

SmallSignalTransistors

SmallSignalTransistors

CentralCentral Semiconductor Corp

美国中央半导体

Central

GeneralPurposeTransistors

Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSiliconExpitaxialPlanarTransistorforswitchingandamplifierapplications

SEMTECH

Semtech Corporation

SEMTECH

NPNswitchingtransistor

NPNswitchingtransistorinaTO-92;SOT54plasticpackage.PNPcomplement:2N3906. 1.Lowcurrent(max.200mA) 2.Lowvoltage(max.40V).

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SMALLSIGNALTRANSISTORSNPN

FEATURES ♦NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. ♦Ascomplementarytype,thePNPtransistor2N3906isrecommended. ♦Onspecialrequest,thistransistorisalsomanufacturedinthepinconfigurationTO-18. ♦Thistransistorisalsoavailableinthe

GE

GE Industrial Company

GE

NPNGeneralPurposeAmplifier

Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHSCompliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconTransistor(Generalsmallsignalapplication)

Descriptions •Generalsmallsignalapplication •Switchingapplication Features •Lowcollectorsaturationvoltage:VCE(sat)=0.3V(MAX.)@IC=50mA,IB=5mA •Lowcollectoroutputcapacitance:Cob=3pF(Typ.)@VCB=5V,IE=0,f=1MHz •ComplementarypairwithSTA3906A

AUK

AUK

AUK

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=50nA(Max.),IBL=50nA(Max.) @VCE=30V,VEB=3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=50mA,IB=5mA. •LowCollectorOutputCapacitance

KECKEC CORPORATION

KEC株式会社

KEC

Si-EpitaxialPlanarTransistors

NPNSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec

NPNSILICONPLANAREPITAXIALTRANSISTORS

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

SmallSignalTransistors

SmallSignalTransistors

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

NPNGENERALPURPOSEAMPLIFIER

FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PC(MAX)=625mW *Complementaryto2N3906

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SMALLSIGNALNPNTRANSISTOR

1.SILICONEPITAXIALPLANARNPNTRANSISTOR 2.TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY 3.THEPNPCOMPLEMENTARYTYPEIS2N3906 APPLICATIONS 1.WELLSUITABLEFORTVANDHOMEAPPLIANCEEQUIPMENT 2.SMALLLOADSWITCHTRANSISTORWITHHIGHGAINANDLOWSATURATIONVOLTAGE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

NPNSiliconTransistor

Descriptions •Generalsmallsignalapplication •Switchingapplication Features •Lowcollectorsaturationvoltage •Collectoroutputcapacitance •Complementarypairwith2N3906

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

Si-Epitaxial-PlanarSwitchingTransistors

NPNSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec

NPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3903and2N3904typesareNPNsilicontransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N3905and2N3906. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •Complimentary(PNP)device:2N3906 •Pbfreeproductareavailable:99SnabovecanmeetRoHSenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

NPNSiliconGeneralPurposeTransistor

FEATURES •PowerDissipationPCM:625mW(Ta=25°C) •CollectorCurrentICM:200mA •Collector–BaseVoltageV(BR)CBO:60V

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURE ●NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3904

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA

TRANSISTOR(NPN)

PRODUCTSUMMARY TO-92Plastic-EncapsulateTransistors FEATURES NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications Ascomplementarytype,thePNPtransistor2N3906isRecommended ThistransistorisalsoavailableintheSOT-23casewiththetypedesign

SSC

Silicon Standard Corp.

SSC

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeswitchingandamplifierapplications. Pinning 1=Emitter 2=Base 3=Collector

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

TRANSISTOR(NPN)

FEATURE ●NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906is Recommended ●ThistransistorisalsoavailableintheSOT-23casewith thetypedesignationMMBT3904

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

NPNTransistors

Features ●NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications

FEATURE ●NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906is Recommended

FS

First Silicon Co., Ltd

FS

NPNGeneral-PurposeAmplifier

Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNTransistorTO-92

Features: •NPNsiliconplanarswitchingtransistors •Fastswitchingdevicesexhibitingshortturn-offandlowsaturationvoltagecharacteristics •Generalpurposeswitchingandamplifierapplications

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

Plastic-EncapsulateTransistors

FEATURE ●NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3904

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors2N3905and2N3906arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3904

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

NPNSILICONPLANAREPITAXIALSWITCHINGTRANSISTORS

TO-92PlasticPackage GeneralPurposeSwitchingAndAmplifierApplications

CDIL

CDIL

CDIL

NPNSMALLSIGNALGENERALPURPOSEAMPLIFIERANDSWITCH

NPNSMALLSIGNALGENERALPURPOSEAMPLIFIERANDSWITCH

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Lowcurrent,Lowvoltage. Applications Generalpurposeamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

iscSiliconNPNPowerTransistor

DESCRIPTION •LowSaturationVoltage-:VCE(sat)=200mV(Max)@IC=10mA •ComplementtoType2N3906. APPLICATIONS •Designedforhigh-speedswitchingandAmplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEPITAXIALPLANARTRANSISTOR

Description The2N3904isdesignedforgeneralpurposeswitchingandamplifierapplications. AbsoluteMaximumRatings •MaximumTemperatures StorageTemperature...............................................................................................-55~+150°C JunctionTemperature

TGS

Tiger Electronic Co.,Ltd

TGS

NPNGeneralPurposeTransistor

Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT3906/SST3906/MMST3906 /2N3906.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNGeneralPurposeAmplifier

Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

PFSShenzhen Ping Sheng Electronics Co., Ltd.

平盛电子深圳市平盛电子有限公司

PFS

EPITAXIALPLANARNPNTRANSISTOR

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ●LowLeakageCurrent :ICEX=50nA(Max.),IBL=50nA(Max.) @VCE=30V,VEB=3V. ●LowSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=50mA,IB=5mA. ●LowCollectorOutputCapacitance :Cob=4pF(Max.)@VCB=5V. ●Complementary

KECKEC CORPORATION

KEC株式会社

KEC

SMALLSIGNALNPNTRANSISTOR

1.SILICONEPITAXIALPLANARNPNTRANSISTOR 2.TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY 3.THEPNPCOMPLEMENTARYTYPEIS2N3906 APPLICATIONS 1.WELLSUITABLEFORTVANDHOMEAPPLIANCEEQUIPMENT 2.SMALLLOADSWITCHTRANSISTORWITHHIGHGAINANDLOWSATURATIONVOLTAGE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2N39产品属性

  • 类型

    描述

  • 型号

    2N39

  • 功能描述

    TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-98

更新时间:2024-4-26 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
华轩阳/HXY
2020+
原厂原装正品
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
onsemi(安森美)
23+
TO-92-3
2317
原厂订货渠道,支持BOM配单一站式服务
Micro Commercial Co
23+
TO-226-3,TO-92-3 标准主体(!-
30000
晶体管-分立半导体产品-原装正品
中性
21+
SOT-23
9800
只做原装正品假一赔十!正规渠道订货!
UTC(友顺)
24+
TO-92-2.54mm
5000
诚信服务,绝对原装原盘。
江阴
17+
DIP
9988
只做原装,现货库存
FSC
21+
TO-92
5000
专营原装正品现货,当天发货,可开发票!
CJ(江苏长电/长晶)
2023+
N/A
4550
全新原装正品
ON
21+
TO-92
30000
ON一级代理商 原装进口现货
NEC
2339+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!

2N39芯片相关品牌

  • ABLIC
  • AMD
  • COILCRAFT
  • Good-Ark
  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

2N39数据表相关新闻