2N3906晶体管资料

  • 2N3906别名:2N3906三极管、2N3906晶体管、2N3906晶体三极管

  • 2N3906生产厂家:美国摩托罗拉半导体公司_德国电子元件股份公司_美国

  • 2N3906制作材料:Si-PNP

  • 2N3906性质:通用型 (Uni)

  • 2N3906封装形式:直插封装

  • 2N3906极限工作电压:40V

  • 2N3906最大电流允许值:0.2A

  • 2N3906最大工作频率:>200MHZ

  • 2N3906引脚数:3

  • 2N3906最大耗散功率:0.625W

  • 2N3906放大倍数:β>100

  • 2N3906图片代号:A-31

  • 2N3906vtest:40

  • 2N3906htest:200000100

  • 2N3906atest:.2

  • 2N3906wtest:.625

  • 2N3906代换 2N3906用什么型号代替

2N3906价格

参考价格:¥0.2321

型号:2N3906 品牌:MULTICOMP 备注:这里有2N3906多少钱,2024年最近7天走势,今日出价,今日竞价,2N3906批发/采购报价,2N3906行情走势销售排行榜,2N3906报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N3906

GeneralPurposeTransistors(PNPSilicon)

GeneralPurposeTransistors PNPSilicon

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N3906

PNPswitchingtransistor

DESCRIPTION PNPswitchingtransistorinaTO-92;SOT54plasticpackage.NPNcomplement:2N3904. FEATURES 1.Lowcurrent(max.200mA) 2.Lowvoltage(max.40V). APPLICATIONS 1.High-speedswitchinginindustrialapplications.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
2N3906

PNPSMALLSIGNALTRANSISTOR

TRSYS

Transys Electronics

TRSYS
2N3906

PNPGeneralPurposeTransistor

Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2N3906

NPNSiliconExpitaxialPlanarTransistorforswitchingandamplifierapplications?

SEMTECH

Semtech Corporation

SEMTECH
2N3906

PNPGeneralPurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N3906

SMALLSIGNALTRANSISTORSPNP

FEATURES ♦PNPSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. ♦Ascomplementarytype,theNPNtransistor2N3904isrecommended. ♦Onspecialrequest,thistransistorisalsomanufacturedinthepinconfigurationTO-18. ♦Thistransistorisalsoavailableinthe

GE

GE Industrial Company

GE
2N3906

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.),IBL=-50nA(Max.) @VCE=-30V,VEB=-3V. •ExcellentDCCurrentGainLinearity •LowSaturationVoltage :VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. •LowCollectorOutputCa

KECKEC CORPORATION

KEC株式会社

KEC
2N3906

PNPGeneralPurposeAmplifier

Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ●Capableof600mWofPowerDisspationand200mAIc ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivityLevel1 ●ThroughHolePackage ●Marking:Typenumber

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N3906

PNPSiliconTransistor(GeneralsmallsignalapplicationSwitchingapplication)

Descriptions 1.Generalsmallsignalapplication 2.Switchingapplication Features 1.Lowcollectorsaturationvoltage 2.Collectoroutputcapacitance 3.Complementarypairwith2N3904

AUK

AUK

AUK
2N3906

Si-EpitaxialPlanarTransistors

Si-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec
2N3906

SmallSignalTransistors

SmallSignalTransistors

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N3906

SMALLSIGNALPNPTRANSISTOR

SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARNPNTRANSISTOR ■TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY ■THENPNCOMPLEMENTARYTYPEIS2N3904 APPLICATIONS ■WELLSUITABLEFORTVANDHOMEAPPLIANCEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITHHIGHGAINANDLOWSATURATIO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
2N3906

PNPGeneralPurposeTransistors

PNPGeneralPurposeTransistors

WEITRONWEITRON

威堂電子科技

WEITRON
2N3906

GENERALPURPOSEAPPLIATION

GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *ComplementarytoUTC2N3904

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N3906

PNPGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER625mWatts FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=-200mA •Pbfreeproductareavailable:99SnabovecanmeetRoHSenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2N3906

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeswitchingandamplifierapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2N3906

PNPSiliconGeneralPurposeTransistor

FEATURES ●PowerDissipationPCM:625mW(Ta=25°C) ●CollectorCurrentICM:-200mA ●Collector–BaseVoltageV(BR)CBO:-40V

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N3906

PNPSILICONTRANSISTOR:

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3905and2N3906typesarePNPsilicontransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.NPNcomplementarytypesare2N3903and2N3904. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N3906

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURE ●PNPsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,theNPNtransistor2N3904isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3906

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
2N3906

TRANSISTOR(PNP)

PRODUCTSUMMARY TO-92Plastic-EncapsulateTransistors FEATURES PNPsiliconepitaxialplanartransistorforswitchingandAmplifierapplications Ascomplementarytype,theNPNtransistor2N3904isRecommended ThistransistorisalsoavailableintheSOT-23casewiththetypedesignation

SSC

Silicon Standard Corp.

SSC
2N3906

PNPEPITAXIALPLANARTRANSISTOR

Description The2N3906isdesignedforgeneralpurposeswitchingandamplifierapplications.

TGS

Tiger Electronic Co.,Ltd

TGS
2N3906

Si-Epitaxial-PlanarSwitchingTransistors

•Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec
2N3906

PNPSILICONPLANAREPITAXIALTRANSISTORS

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2N3906

TRANSISTOR(PNP)

FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2N3906

Plastic-EncapsulateTransistors

FEATURE ●PNPsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,theNPNtransistor2N3904isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3906

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
2N3906

PNPsiliconepitaxialplanartransistorforswitchingandAmplifierapplications

FEATURE ●PNPsiliconepitaxialplanartransistorforswitchingand Amplifierapplications ●Ascomplementarytype,theNPNtransistor2N3904is Recommended

FS

First Silicon Co., Ltd

FS
2N3906

PNPSMALLSIGNALGENERALPURPOSEAMPLIFIERANDSWITCH

PNPSMALLSIGNALGENERALPURPOSEAMPLIFIERANDSWITCH

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2N3906

PNPSILICONPLANAREPITAXIALSWITCHINGTRANSISTORS

GeneralPurposeSwitchingAndAmplifierApplications

CDIL

CDIL

CDIL
2N3906

PNPSMALLSIGNALTRANSISTOR

Features ●EpitaxialPlanarDieConstruction ●AvailableinBothThrough-HoleandSurfaceMountPackages ●SuitableforSwitchingandAmplifierApplications ●ComplementaryNPNTypesAvailable(2N3904)

DIODESDiodes Incorporated

达尔科技

DIODES
2N3906

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURE ●PNPsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,theNPNtransistor2N3904isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3906

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2N3906

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. AscomplementarytypestheNPNtransistors 2N3903and2N3904arerecommended. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
2N3906

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. AscomplementarytypestheNPNtransistors 2N3903and2N3904arerecommended. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2N3906

Generalsmallsignalapplication

Descriptions •Generalsmallsignalapplication •Switchingapplication Features •Lowcollectorsaturationvoltage •Collectoroutputcapacitance •Complementarypairwith2N3904

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI
2N3906

iscSiliconPNPPowerTransistor

文件:202.39 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N3906

PNPTransistors

文件:47.51 Kbytes Page:1 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N3906

GENERALPURPOSEAPPLIATION

文件:192.03 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N3906

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:剪切带(CT)带盒(TB) 描述:TRANS PNP 40V 0.2A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
2N3906

SiliconPNPtransistorinaTO-92PlasticPackage

文件:984.1 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2N3906

GeneralPurposePNPTransistors

文件:149.59 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
2N3906

TRANSISTOR(PNP)

文件:272.58 Kbytes Page:2 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2N3906

Plastic-EncapsulatedMultipleTransistors??QuadSurfaceMount(Case751B-SO-16)??NPN/PNP)

文件:53.1 Kbytes Page:1 Pages

ALLIED

Allied Components International

ALLIED
2N3906

PNPSILICONTRANSISTOR

文件:323.45 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
2N3906

PNPGeneralPurposeAmplifier

文件:231.54 Kbytes Page:5 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N3906

PNPGeneralPurposeAmplifier

文件:448.44 Kbytes Page:5 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N3906

PNPGeneralPurposeTransistor

文件:382.79 Kbytes Page:3 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N3906

EPITAXIALPLANARPNPTRANSISTOR

文件:56.59 Kbytes Page:4 Pages

KECKEC CORPORATION

KEC株式会社

KEC
2N3906

GeneralPurposeTransistors

文件:179.42 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N3906

PNPGeneralPurposeAmplifier

文件:98.63 Kbytes Page:6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N3906

GeneralPurposeTransistorsPNPSilicon

文件:81.91 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N3906

GeneralPurposeTransistors

文件:101.93 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

EPITAXIALPLANARPNPTRANSISTOR

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.),IBL=-50nA(Max.) @VCE=-30V,VEB=-3V. •LowSaturationVoltage :VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. •LowCollectorOutputCapacitance :Cob=4.5pF(Max.)@VCB=5V. •Co

KECKEC CORPORATION

KEC株式会社

KEC

SMALLSIGNALPNPTRANSISTOR

SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARNPNTRANSISTOR ■TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY ■THENPNCOMPLEMENTARYTYPEIS2N3904 APPLICATIONS ■WELLSUITABLEFORTVANDHOMEAPPLIANCEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITHHIGHGAINANDLOWSATURATIO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

PNPGeneralPurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PNPGeneralPurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.),IBL=-50nA(Max.) @VCE=-30V,VEB=-3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. •LowCollectorOutputCapacita

KECKEC CORPORATION

KEC株式会社

KEC

EPITAXIALPLANARPNPTRANSISTOR

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent:ICEX=-50nA(Max.),IBL=-50nA(Max.)@VCE=-30V,VEB=-3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage:VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. •LowCollectorOutputCapacitance:Cob=4.5pF

KECKEC CORPORATION

KEC株式会社

KEC

GeneralPurposetransistor

Features -PNPsiliconepitaxialplanartransistorforswitchingandamplifierapplication. -Ascomplementarytype,theNPNtransistor2N3904-Gisrecommended. -ThistransistorisavailableintheSOT-23casewiththetypedesignationMMBT3906-G.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

PNPSiliconTransistor

Descriptions •Generalsmallsignalapplication •Switchingapplication Features •Lowcollector-emittersaturationvoltage:0.4V(Max.)@IC=-50mA,IB=-5mA •Lowcollectoroutputcapacitance:4.5pF(Max.)@VCB=-5V,IE=0,f=1MHz •Complementarypairwith2N3904N

AUK

AUK

AUK

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.),IBL=-50nA(Max.) @VCE=-30V,VEB=-3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. •LowCollectorOutputCapacita

KECKEC CORPORATION

KEC株式会社

KEC

2N3906产品属性

  • 类型

    描述

  • 型号

    2N3906

  • 功能描述

    两极晶体管 - BJT PNP Gen Pur SS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-19 17:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC
23+
SOT89
7635
全新原装优势
KEC
22+
SOT-23
600000
航宇科工半导体-央企优秀战略合作伙伴!
ON
17+
SOT23
9988
只做原装进口,自己库存
onsemi(安森美)
23+
TO-92-3
2317
原厂订货渠道,支持BOM配单一站式服务
ON/安森美
23+
TO-92
31316
正规渠道,免费送样。支持账期,BOM一站式配齐
ON/安森美
24+
SMD
860000
明嘉莱只做原装正品现货
KEC
2024
SOT23
16532
原装现货,欢迎咨询
KEC
21+
SOT23
9800
只做原装正品假一赔十!正规渠道订货!
MOTO
587
原装正品现货供应
ST(先科)
22+
TO-92
10000
只做原装现货 假一赔万

2N3906芯片相关品牌

  • ALSC
  • ATS2
  • BETLUX
  • delta
  • Diotec
  • ETAL
  • LUMBERG
  • Molex
  • MOLEX11
  • ONSEMI
  • WEIDMULLER
  • YFWDIODE

2N3906数据表相关新闻