General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN switching transistor

NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906. 1. Low current (max. 200 mA) 2. Low voltage (max. 40 V).

NPN Silicon Transistor (General small signal application)

Descriptions • General small signal application • Switching application Features • Low collector saturation voltage : VCE(sat)=0.3V(MAX.) @ IC=50mA, IB=5mA • Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz • Complementary pair with STA3906A

NPN General Purpose Amplifier

Features • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Si-Epitaxial PlanarTransistors

NPN Si-Epitaxial PlanarTransistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

Small Signal Transistors

Small Signal Transistors

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications

SMALL SIGNAL TRANSISTORS NPN

FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor 2N3906 is recommended. ♦ On special request, this transistor is also manufactured in the pin configuration TO-18. ♦ This transistor is also available in the

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

NPN GENERAL PURPOSE AMPLIFIER

FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906

SMALL SIGNAL NPN TRANSISTOR

1. SILICON EPITAXIAL PLANAR NPN TRANSISTOR 2. TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY 3. THE PNP COMPLEMENTARY TYPE IS 2N3906 APPLICATIONS 1. WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT 2. SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Complimentary (PNP) device:2N3906 • Pb free product are available :99 Sn above can meet RoHS environment substance directive request

NPN Silicon General Purpose Transistor

FEATURES • Power Dissipation PCM: 625mW (Ta=25°C) • Collector Current ICM: 200mA • Collector – Base Voltage V(BR)CBO: 60V

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● NPN silicon epitaxial planar transistor for switching and Amplifier applications ● As complementary type, the PNP transistor 2N3906 is Recommended ● This transistor is also available in the SOT-23 case with the type designation MMBT3904

TRANSISTOR(NPN)

PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors FEATURES NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type design

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose switching and amplifier applications. Pinning 1 = Emitter 2 = Base 3 = Collector

NPN Silicon Transistor

Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3906

Si-Epitaxial-Planar Switching Transistors

NPN Si-Epitaxial PlanarTransistors • Power dissipation 625 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906. MARKING: FULL PART NUMBER

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2N3904 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature............................................................................................... -55~+150°C Junction Temperature

NPN General Purpose Transistor

Features 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906.

NPN General Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH

NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low current, Low voltage. Applications General purpose amplifier.

isc Silicon NPN Power Transistor

DESCRIPTION • Low Saturation Voltage- : VCE(sat)= 200mV(Max)@ IC =10mA • Complement to Type 2N3906. APPLICATIONS • Designed for high-speed switching and Amplifier applications.

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations.

NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS

TO-92 Plastic Package General Purpose Switching And Amplifier Applications

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● NPN silicon epitaxial planar transistor for switching and Amplifier applications ● As complementary type, the PNP transistor 2N3906 is Recommended ● This transistor is also available in the SOT-23 case with the type designation MMBT3904

TRANSISTOR (NPN)

FEATURE ● NPN silicon epitaxial planar transistor for switching and Amplifier applications ● As complementary type, the PNP transistor 2N3906 is Recommended ● This transistor is also available in the SOT-23 case with the type designation MMBT3904

NPN Transistors

Features ● NPN silicon epitaxial planar transistor for switching and Amplifier applications

NPN silicon epitaxial planar transistor for switching and Amplifier applications

FEATURE ● NPN silicon epitaxial planar transistor for switching and Amplifier applications ● As complementary type, the PNP transistor 2N3906 is Recommended

NPN General - Purpose Amplifier

Description This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Plastic-Encapsulate Transistors

FEATURE ● NPN silicon epitaxial planar transistor for switching and Amplifier applications ● As complementary type, the PNP transistor 2N3906 is Recommended ● This transistor is also available in the SOT-23 case with the type designation MMBT3904

NPN Transistor TO-92

Features: •NPN silicon planar switching transistors •Fast switching devices exhibiting short turn-off and low saturation voltage characteristics •General purpose switching and amplifier applications

TO-92 Plastic-Encapsulate Transistors

Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904

General Purpose Transistors

Features • Pb−Free Packages are Available*

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.3V(Max) @IC=50mA APPLICATIONS ·Switching Regulators ·Converters ·Power Amplifiers

NPN Transistor

Features: •NPN silicon planar switching transistors •Fast switching devices exhibiting short turn-off and low saturation voltage characteristics •General purpose switching and amplifier applications

NPN General Purpose Amplifier

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General Purpose Transistors

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NPN GENERAL PURPOSE AMPLIFIER

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General small signal application

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General Purpose NPN Transistors

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 40V 0.2A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON TRANSISTOR

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NPN General Purpose Amplifier

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Plastic-Encapsulated Multiple Transistors ??Quad Surface Mount (Case 751B-SO-16) ??NPN/PNP)

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NPN General Purpose Amplifier

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GENERAL PURPOSE NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS

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NPN General Purpose Amplifier

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EPITAXIAL PLANAR NPN TRANSISTOR

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NPN General Purpose Transistor

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High-Vin, High-Efficiency Power Solution Using DC/DC Converter With DVFS

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High-Integration, High-Efficiency Power Solution Using DC/DC Converters With DVFS

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NPN GENERAL PURPOSE AMPLIFIER

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General Purpose Transistors

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NPN General Purpose Amplifier

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