GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable*

NPNswitchingtransistor

NPNSiliconExpitaxialPlanarTransistorforswitchingandamplifierapplications

SMALLSIGNALTRANSISTORSNPN

FEATURES ♦NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. ♦Ascomplementarytype,thePNPtransistor2N3906isrecommended. ♦Onspecialrequest,thistransistorisalsomanufacturedinthepinconfigurationTO-18. ♦Thistransistorisalsoavailableinthe

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=50nA(Max.),IBL=50nA(Max.) @VCE=30V,VEB=3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=50mA,IB=5mA. •LowCollectorOutputCapacitance

NPNSiliconTransistor(Generalsmallsignalapplication)

Descriptions •Generalsmallsignalapplication •Switchingapplication Features •Lowcollectorsaturationvoltage:VCE(sat)=0.3V(MAX.)@IC=50mA,IB=5mA •Lowcollectoroutputcapacitance:Cob=3pF(Typ.)@VCB=5V,IE=0,f=1MHz •ComplementarypairwithSTA3906A

NPNGeneralPurposeAmplifier

Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHSCompliant.SeeOrderingInformation)

NPNSILICONPLANAREPITAXIALTRANSISTORS

Si-EpitaxialPlanarTransistors

NPNSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

SmallSignalTransistors

SmallSignalTransistors

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

NPNGENERALPURPOSEAMPLIFIER

FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PC(MAX)=625mW *Complementaryto2N3906

SMALLSIGNALNPNTRANSISTOR

1.SILICONEPITAXIALPLANARNPNTRANSISTOR 2.TO-92PACKAGESUITABLEFORTHROUGH-HOLEPCBASSEMBLY 3.THEPNPCOMPLEMENTARYTYPEIS2N3906 APPLICATIONS 1.WELLSUITABLEFORTVANDHOMEAPPLIANCEEQUIPMENT 2.SMALLLOADSWITCHTRANSISTORWITHHIGHGAINANDLOWSATURATIONVOLTAGE

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •Complimentary(PNP)device:2N3906 •Pbfreeproductareavailable:99SnabovecanmeetRoHSenvironmentsubstancedirectiverequest

NPNSiliconGeneralPurposeTransistor

FEATURES •PowerDissipationPCM:625mW(Ta=25°C) •CollectorCurrentICM:200mA •Collector–BaseVoltageV(BR)CBO:60V

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURE ●NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3904

TRANSISTOR(NPN)

PRODUCTSUMMARY TO-92Plastic-EncapsulateTransistors FEATURES NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications Ascomplementarytype,thePNPtransistor2N3906isRecommended ThistransistorisalsoavailableintheSOT-23casewiththetypedesign

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeswitchingandamplifierapplications. Pinning 1=Emitter 2=Base 3=Collector

NPNSiliconTransistor

Descriptions •Generalsmallsignalapplication •Switchingapplication Features •Lowcollectorsaturationvoltage •Collectoroutputcapacitance •Complementarypairwith2N3906

Si-Epitaxial-PlanarSwitchingTransistors

NPNSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

NPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3903and2N3904typesareNPNsilicontransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N3905and2N3906. MARKING:FULLPARTNUMBER

NPNEPITAXIALPLANARTRANSISTOR

Description The2N3904isdesignedforgeneralpurposeswitchingandamplifierapplications. AbsoluteMaximumRatings •MaximumTemperatures StorageTemperature...............................................................................................-55~+150°C JunctionTemperature

NPNGeneralPurposeTransistor

Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT3906/SST3906/MMST3906 /2N3906.

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

NPNGeneralPurposeAmplifier

Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

NPNSMALLSIGNALGENERALPURPOSEAMPLIFIERANDSWITCH

NPNSMALLSIGNALGENERALPURPOSEAMPLIFIERANDSWITCH

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Lowcurrent,Lowvoltage. Applications Generalpurposeamplifier.

iscSiliconNPNPowerTransistor

DESCRIPTION •LowSaturationVoltage-:VCE(sat)=200mV(Max)@IC=10mA •ComplementtoType2N3906. APPLICATIONS •Designedforhigh-speedswitchingandAmplifierapplications.

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors2N3905and2N3906arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations.

NPNSILICONPLANAREPITAXIALSWITCHINGTRANSISTORS

TO-92PlasticPackage GeneralPurposeSwitchingAndAmplifierApplications

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3904

Plastic-EncapsulateTransistors

FEATURE ●NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3904

TRANSISTOR(NPN)

FEATURE ●NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906is Recommended ●ThistransistorisalsoavailableintheSOT-23casewith thetypedesignationMMBT3904

NPNTransistors

Features ●NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications

NPNsiliconepitaxialplanartransistorforswitchingandAmplifierapplications

FEATURE ●NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications ●Ascomplementarytype,thePNPtransistor2N3906is Recommended

NPNGeneral-PurposeAmplifier

Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier.

NPNTransistorTO-92

Features: •NPNsiliconplanarswitchingtransistors •Fastswitchingdevicesexhibitingshortturn-offandlowsaturationvoltagecharacteristics •Generalpurposeswitchingandamplifierapplications

TO-92Plastic-EncapsulateTransistors

Features NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications Ascomplementarytype,thePNPtransistor2N3906is Recommended ThistransistorisalsoavailableintheSOT-23casewith thetypedesignationMMBT3904

GeneralPurposeTransistors

Features •Pb−FreePackagesareAvailable*

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=40V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=0.3V(Max)@IC=50mA APPLICATIONS ·SwitchingRegulators ·Converters ·PowerAmplifiers

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 40V 0.2A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

GeneralPurposeTransistors

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NPNGENERALPURPOSEAMPLIFIER

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Generalsmallsignalapplication

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GeneralPurposeNPNTransistors

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NPNSILICONTRANSISTOR

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NPNGeneralPurposeAmplifier

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Plastic-EncapsulatedMultipleTransistors??QuadSurfaceMount(Case751B-SO-16)??NPN/PNP)

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NPNGeneralPurposeAmplifier

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GENERALPURPOSENPNTRANSISTORFORHIGHRELIABILITYAPPLICATIONS

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NPNGeneralPurposeAmplifier

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EPITAXIALPLANARNPNTRANSISTOR

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NPNGENERALPURPOSEAMPLIFIER

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GeneralPurposeTransistors

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High-Vin,High-EfficiencyPowerSolutionUsingDC/DCConverterWithDVFS

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High-Integration,High-EfficiencyPowerSolutionUsingDC/DCConvertersWithDVFS

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NPNGeneralPurposeAmplifier

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SiliconNPNEpitaxialGeneralPurposeAmplifier

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MediumIntegratedPowerSolutionUsingaDualDC/DCConverterandanLDO

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GeneralPurposeTransistorsNPNSilicon

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