Small Signal Transistors

Small Signal Transistors

SI NPN POWER BJT, I(C)

Description: Si NPN Power BJT, I(C)

Chip Type 2C3866A Geometry 1007 Polarity NPN

Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for amplifier, frequency multiplier and oscillator applications. Suitable for output, driver and predriver stages in VHF and UHF equipment. Features: Special Charac

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Specified 400 MHz, 28Vdc

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications. Compliance to RoHS.

isc Silicon NPN Planar Epitaxial OverlayTransistor

DESCRIPTION • High Gain Bandwidth Product fT = 500 MHz (Min.) • Low Collector Capacitance; CC = 3 pF Max. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in output, driver or pre-driver stagesin VHF and UHF equip

NPN UHF/VHF POWER TRANSISTORS

NPN UHF/VHF POWER TRANSISTORS The ITT 2N3866 and 2N4427 are silicon plannar epitaxial NPN power transistors intended for use in UHF/VHF applications.

Small Signal Transistors

Small Signal Transistors TO-39 Case

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications MARKING: FULL PART NUMBER.

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Silicon planar epitaxial overlay transistors

DESCRIPTION NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits. APPLICATIONS • The transistors are intended for use in output, driver or pre-dri

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The 2N3866A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Specified 400 MHz, 28Vdc

Type 2N3866A Geometry 1007 Polarity NPN

Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for amplifier, frequency multiplier and oscillator applications. Suitable for output, driver and predriver stages in VHF and UHF equipment. Features: Special Charac

Chip Type 2C3866A Geometry 1007 Polarity NPN

Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for amplifier, frequency multiplier and oscillator applications. Suitable for output, driver and predriver stages in VHF and UHF equipment. Features: Special Charac

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications MARKING: FULL PART NUMBER.

5W NPN RF BJT Transistor

This BJT is packaged in TO-39 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Chip Type 2C3866A Geometry 1007 Polarity NPN

Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for amplifier, frequency multiplier and oscillator applications. Suitable for output, driver and predriver stages in VHF and UHF equipment. Features: Special Charac

Silicon NPN Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3866UBJ) • JANTX level (2N3866UBJX) • JANTXV level (2N3866UBJV) • JANS level (2N3866UBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072

PNP SILICON POWER SWITCHING TRANSISTOR

PNP SILICON POWER SWITCHING TRANSISTOR Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications TO-39 Metal Can Package

POWER TRANSISTORS PNP SILICON

3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS

Silicon PNP Power Transistors

PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/350

Small Signal Transistors

Small Signal Transistors TO-39 Case

Silicon PNP Power Transistors

PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/350

PNP SWITCHING SILICON TRANSISTOR

Bipolar PNP Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar PNP Device. VCEO = 40V IC = 1A

POWER TRANSISTORS PNP SILICON

3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS

SI PNP POWER BJT

3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

Silicon PNP Power Transistors

PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/350

Small Signal Transistors

Small Signal Transistors TO-39 Case

Silicon PNP Power Transistors

PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/350

SI NPN POWER BJT, I(C) < 1A

isc Silicon NPN Power Transistor

文件：259.14 Kbytes Page：2 Pages

isc Silicon NPN Power Transistor

文件：259.709 Kbytes Page：2 Pages

isc Silicon NPN Power Transistor

文件：259.5 Kbytes Page：2 Pages

GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes Page：6 Pages

46 DARRAND STREET BLOOMFIELD, NEW JERSEY 07003

文件：380.92 Kbytes Page：6 Pages

NPN SILICON HIGH-FREQUENCY TRANSISTOR

文件：142.12 Kbytes Page：4 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：528.41 Kbytes Page：2 Pages

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：631.67 Kbytes Page：9 Pages

NPN - RF Transistor Die 0.4 Amp, 20 Volt

文件：585.47 Kbytes Page：8 Pages

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：665.86 Kbytes Page：9 Pages

PNP - RF Transistor Die 0.4 Amp, 40 Volt

文件：624.25 Kbytes Page：8 Pages

Transistor

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：托盘 描述：RF TRANS NPN 30V 500MHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON HIGH-FREQUENCY TRANSISTOR

文件：142.12 Kbytes Page：4 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：528.41 Kbytes Page：2 Pages

PNP - RF Transistor Die 0.4 Amp, 40 Volt

文件：624.25 Kbytes Page：8 Pages

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：665.86 Kbytes Page：9 Pages

NPN - RF Transistor Die 0.4 Amp, 20 Volt

文件：585.47 Kbytes Page：8 Pages

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：631.67 Kbytes Page：9 Pages

Silicon NPN Transistor

文件：199.26 Kbytes Page：2 Pages

46 DARRAND STREET BLOOMFIELD, NEW JERSEY 07003

文件：380.92 Kbytes Page：6 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：528.41 Kbytes Page：2 Pages

NPN SILICON HIGH-FREQUENCY TRANSISTOR

文件：142.12 Kbytes Page：4 Pages

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：托盘 描述：RF TRANS NPN 30V 400MHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

Silicon NPN Transistor

文件：199.26 Kbytes Page：2 Pages

Silicon NPN Transistor

文件：234.03 Kbytes Page：2 Pages