Type 2N3866A Geometry 1007 Polarity NPN

Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for amplifier, frequency multiplier and oscillator applications. Suitable for output, driver and predriver stages in VHF and UHF equipment. Features: Special Charac

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Specified 400 MHz, 28Vdc

Chip Type 2C3866A Geometry 1007 Polarity NPN

Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for amplifier, frequency multiplier and oscillator applications. Suitable for output, driver and predriver stages in VHF and UHF equipment. Features: Special Charac

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The 2N3866A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications MARKING: FULL PART NUMBER.

5W NPN RF BJT Transistor

This BJT is packaged in TO-39 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

NPN SILICON HIGH-FREQUENCY TRANSISTOR

文件：142.12 Kbytes Page：4 Pages

Silicon NPN Transistor

文件：199.26 Kbytes Page：2 Pages

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：528.41 Kbytes Page：2 Pages

PNP - RF Transistor Die 0.4 Amp, 40 Volt

文件：624.25 Kbytes Page：8 Pages

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：665.86 Kbytes Page：9 Pages

NPN - RF Transistor Die 0.4 Amp, 20 Volt

文件：585.47 Kbytes Page：8 Pages

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：631.67 Kbytes Page：9 Pages

46 DARRAND STREET BLOOMFIELD, NEW JERSEY 07003

文件：380.92 Kbytes Page：6 Pages

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：RF TRANS NPN 30V 400MHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

Chip Type 2C3866A Geometry 1007 Polarity NPN

Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for amplifier, frequency multiplier and oscillator applications. Suitable for output, driver and predriver stages in VHF and UHF equipment. Features: Special Charac

Silicon NPN Transistor

Description\nSemicoa Semiconductors offers:\n• Screening and processing per MIL-PRF-19500 Appendix E\n• JAN level (2N3866AUBJ)\n• JANTX level (2N3866AUBJX)\n• JANTXV level (2N3866AUBJV)\n• JANS level (2N3866AUBJS)\n• QCI to the applicable level\n• 100% die visual inspection per MIL-STD-750 metho • Hermetically sealed Cersot ceramic\n• Also available in chip configuration\n• Chip geometry 1008\n• Reference document: MIL-PRF-19500/398Benefits\n• Qualification Levels: JAN, JANTX, JANTXV and JANS\n• Radiation testing availableApplications\n• General purpose high frequency\n• VHF-UHF amplifier t;

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：托盘 描述：RF TRANS NPN 30V 400MHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

Silicon NPN Transistor

文件：199.26 Kbytes Page：2 Pages

Silicon NPN Transistor

文件：234.03 Kbytes Page：2 Pages

NPN SILICON HIGH-FREQUENCY TRANSISTOR

文件：142.12 Kbytes Page：4 Pages

Silicon NPN Transistor

文件：234.03 Kbytes Page：2 Pages

Chip Type 2C3866A Geometry 1007 Polarity NPN

Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for amplifier, frequency multiplier and oscillator applications. Suitable for output, driver and predriver stages in VHF and UHF equipment. Features: Special Charac

Silicon planar epitaxial overlay transistors

DESCRIPTION NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits. APPLICATIONS • The transistors are intended for use in output, driver or pre-dri