POWER TRANSISTORS (NPN SILICON)

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • Pb−Free Packages are Available

HIGH POWER NPN SILICON TRANSISTOR

DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. ■ STMicroelectronics PREFERRED SALESTYPES

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation

POWER TRANSISTORS(150W)

20 AND 30 AMPERE NPN SILICON POWER TRANSISTORS 40 and 60 VOLTS 150 WATTS

HIGH POWER NPN SILICON POWER TRANSISTORS

20 AND 30 AMPERE NPN SILICON POWER TRANSISTORS 40 and 60 VOLTS 150 WATTS

Power Transistors

Power Transistors

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High power and high current capability APPLICATIONS ·For linear amplifiers, series pass regulators and inductive switching applications

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • High DC Current Gain-hFE=15(Min)@IC = 15A • Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS • Designed for linear amplifiers, series pass regulators, and inductive switching applications.

High Power NPN Silicon Power Transistors

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • Pb−Free Packages are Available

HIGH-POWER NPN SILICON TRANSISTOR

HIGH-POWER NPN SILICON TRANSISTOR

NPN POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3771, 2N3772 types are silicon NPN silicon power transistors manufactured by the epitaxial base process designed for high power amplifier and switchign applications.

High Power Silicon Power Transistor VCEO 60V, IC 20A, 150W, TO-3

Features Forward Biased Second Breakdown Current Capability 2N3772 -- Is/b = 2.5 A DC @ V CE = 60 V DC APPLICATIONS: Linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Description Silicon High Power Transistor, NPN, 60V, 20A

High Power NPN Silicon Power Transistors

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • Pb−Free Packages are Available

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • High DC Current Gain-hFE=15(Min)@IC = 10A • Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS • Designed for linear amplifiers, series pass regulators, and inductive switching applications.

HIGH POWER NPN SILICON TRANSISTOR

HIGH POWER NPN SILICON TRANSISTOR

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High power and high current capability APPLICATIONS ·For linear amplifiers, series pass regulators and inductive switching applications

High Power NPN Silicon Power Transistors

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • Pb−Free Packages are Available

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for linear amplifiers, series pass regulators, and inductive switching applications.

POWER TRANSISTORS (NPN SILICON)

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • Pb−Free Packages are Available

Power Transistors

Power Transistors

SILICON NPN TRANSISTOR

DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications.

NPN SILICON PLANAR POWER TRANSISTOR

Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation

HIGH POWER NPN SILICON POWER TRANSISTORS

20 AND 30 AMPERE NPN SILICON POWER TRANSISTORS 40 and 60 VOLTS 150 WATTS

HIGH POWER NPN SILICON TRANSISTOR

DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. ■ STMicroelectronics PREFERRED SALESTYPES

POWER TRANSISTORS(150W)

20 AND 30 AMPERE NPN SILICON POWER TRANSISTORS 40 and 60 VOLTS 150 WATTS

NPN POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3771, 2N3772 types are silicon NPN silicon power transistors manufactured by the epitaxial base process designed for high power amplifier and switchign applications.

NPN SILICON PLANAR POWER TRANSISTOR

Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.

High Power NPN Silicon Power Transistors

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • Pb−Free Packages are Available

isc Silicon NPN Power Transistor

DESCRIPTION • J:High DC Current Gain-hFE:100-150@IC = 10A • Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for linear amplifiers, series pass regulators, and indu

Hometaxial-Base, High-Current Silicon N-P-N Transistors

Rugged High Voltage Devices for Applications in Industrial and Commercial Equipment These typei are hometaxial-b»se silicon n-p-n transition intended for a wide variety of high-voltage high current applications. Typical applications for these transistors include power-switching circuits, audi

COMPLEMENTARY SILICON POWER TRANSITORS

COMPLEMENTARY SILICON POWER TRANSITORS 16 AMPS

HIGH POWER TRANSISTOR

The 2N3773 is silicon planar NPN transistor in Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. Compliance to RoHS.

Complementary Silicon Power Transistors

Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase™ power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inve

NPN SILICON PLANAR POWER TRANSISTOR

Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

SI NPN POWER BJT

Rugged High Voltage Devices for Applications in Industrial and Commercial Equipment These typei are hometaxial-b»se silicon n-p-n transition intended for a wide variety of high-voltage high current applications. Typical applications for these transistors include power-switching circuits, audi

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N6609 ·High DC current gain ·Low saturation voltage ·High safe operating area APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switchi

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6609 • High DC current gain • Low saturation voltage • High safe operating area APPLICATIONS • Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuit

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N6609 ·High DC current gain ·Low saturation voltage ·High safe operating area APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switchi

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high power audio, disk head positioners, and other linear applications.

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation

COMPLEMENTARY SILICON POWER TRANSISTORS

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 150 WATTS

COMPLEMENTARY SILICON TRANSISTORS

■ DESCRIPTION The UTC 2N3773/2N6099 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solenoid drivers, DC to DC converters or inverts. ■ FEATURES

High power NPN silicon transistor

Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications. Features ■ High power dissipation ■ Low collector-emitter saturation voltage

POWER TRANSISTORS(16A,140V,150W)

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 150 WATTS

NPN SILICON PLANAR POWER TRANSISTOR

NPN SILICON PLANAR POWER TRANSISTOR Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

HIGH VOLTAGE, HIGH CURRENT POWER TRANSISTORS

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

COMPLEMENTARY POWER TRANSISTORS

Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase™ power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inve

Transistor NPN, TO-3

Description: Complementary silicon power transistors. The power transistors designed for high power audio, disk head positions and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers. DC-DC converters or inverters. Features:

SI PNP POWER BJT

Description: Si PNP Power BJT

Silicon NPN Power Transistors

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HIGH POWER NPN SILICON TRANSISTOR

文件：46.27 Kbytes Page：4 Pages

NPN HIGH POWER SILICON TRANSISTOR

文件：67.51 Kbytes Page：2 Pages

High Power NPN Silicon Power Transistors

文件：86.27 Kbytes Page：5 Pages

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 40V 30A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

三极管

Bipolar Power Transistors

NPN Transistor

isc Silicon NPN Power Transistor

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