COMPLEMENTARY POWER TRANSISTORS

Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase™ power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inve

COMPLEMENTARY SILICON POWER TRANSISTORS

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 150 WATTS

COMPLEMENTARY SILICON TRANSISTORS

■ DESCRIPTION The UTC 2N3773/2N6099 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solenoid drivers, DC to DC converters or inverts. ■ FEATURES

NPN SILICON PLANAR POWER TRANSISTOR

Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

COMPLEMENTARY SILICON POWER TRANSITORS

COMPLEMENTARY SILICON POWER TRANSITORS 16 AMPS

POWER TRANSISTORS(16A,140V,150W)

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 150 WATTS

HIGH POWER TRANSISTOR

The 2N3773 is silicon planar NPN transistor in Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. Compliance to RoHS.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high power audio, disk head positioners, and other linear applications.

HIGH VOLTAGE, HIGH CURRENT POWER TRANSISTORS

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6609 • High DC current gain • Low saturation voltage • High safe operating area APPLICATIONS • Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuit

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N6609 ·High DC current gain ·Low saturation voltage ·High safe operating area APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switchi

SI NPN POWER BJT

Rugged High Voltage Devices for Applications in Industrial and Commercial Equipment These typei are hometaxial-b»se silicon n-p-n transition intended for a wide variety of high-voltage high current applications. Typical applications for these transistors include power-switching circuits, audi

Complementary Silicon Power Transistors

Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase™ power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inve

Hometaxial-Base, High-Current Silicon N-P-N Transistors

Rugged High Voltage Devices for Applications in Industrial and Commercial Equipment These typei are hometaxial-b»se silicon n-p-n transition intended for a wide variety of high-voltage high current applications. Typical applications for these transistors include power-switching circuits, audi

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N6609 ·High DC current gain ·Low saturation voltage ·High safe operating area APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switchi

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation

NPN SILICON PLANAR POWER TRANSISTOR

NPN SILICON PLANAR POWER TRANSISTOR Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

High power NPN silicon transistor

Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications. Features ■ High power dissipation ■ Low collector-emitter saturation voltage

功率晶体管互补性的硅晶体管COMPLEMENTARY SILICON TRANSISTORS

·High safe operating area(100 tested)   150W and 100V \n·Complement Characterized for linear operation \n·High DC Current Gain and low saturation voltage  Hfe=15(8A 4V) \n· Vce(sat)=1.4V(Ic=8A,Ib=0.8A) \n·For Low Distortion Complementary Designs;

High power NPN transistor

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包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor

三极管

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 140V 16A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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isc Silicon NPN Power Transistor

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NPN Power Transistors 16 A NPN POWER TRANSISTORS 140 V, 150 W

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GERMANIUM PNP TRANSISTORS

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COMPLEMENTARY SILICON TRANSISTORS

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Complementary Silicon Power Transistors

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Transistor NPN, TO-3

Description: Complementary silicon power transistors. The power transistors designed for high power audio, disk head positions and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers. DC-DC converters or inverters. Features:

Complementary Silicon Power Transistors

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High power NPN transistor

文件：85.86 Kbytes Page：7 Pages

COMPLEMENTARY SILICON TRANSISTORS

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NPN Power Transistors 16 A NPN POWER TRANSISTORS 140 V, 150 W

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Silicon NPN Power Transistors

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COMPLEMENTARY SILICON TRANSISTORS

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isc Silicon NPN Power Transistor

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Complementary Silicon Power Transistors

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Complementary Silicon Power Transistors

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COMPLEMENTARY SILICON TRANSISTORS

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COMPLEMENTARY SILICON TRANSISTORS

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isc Silicon NPN Power Transistor

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COMPLEMENTARY SILICON TRANSISTORS

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COMPLEMENTARY SILICON TRANSISTORS

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