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2N374晶体管资料

  • 2N374别名:2N374三极管、2N374晶体管、2N374晶体三极管

  • 2N374生产厂家:美国无线电公司_SYL

  • 2N374制作材料:Ge-PNP

  • 2N374性质:射频/高频放大 (HF)

  • 2N374封装形式:直插封装

  • 2N374极限工作电压:24V

  • 2N374最大电流允许值:0.01A

  • 2N374最大工作频率:30MHZ

  • 2N374引脚数:4

  • 2N374最大耗散功率:0.08W

  • 2N374放大倍数

  • 2N374图片代号:C-36

  • 2N374vtest:24

  • 2N374htest:30000000

  • 2N374atest:0.01

  • 2N374wtest:0.08

  • 2N374代换 2N374用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,3AG54A,

2N374价格

参考价格:¥48.6798

型号:2N3740 品牌:Centralr 备注:这里有2N374多少钱,2026年最近7天走势,今日出价,今日竞价,2N374批发/采购报价,2N374行情走势销售排行榜,2N374报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Medium Power PNP Transistors

PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/441

MICROSEMI

美高森美

MEDIUM-POWER PNP TRANSISTORS

BOCA

博卡

PNP SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER

CENTRAL

Power Transistors

Power Transistors TO-66 Case

CENTRAL

POWER TRANSISTORS(4A,25W)

MOSPEC

统懋

isc Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe area limits • Low collector saturation voltage APPLICATIONS • Suitable for use in as drivers, switches and medium-power amplifier and applications

ISC

无锡固电

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

SI PNP POWER BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe area limits • Low collector saturation voltage APPLICATIONS • Suitable for use in as drivers, switches and medium-power amplifier and applications

SAVANTIC

MEDIUM POWER PNP TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors TO-66 Case

CENTRAL

PNP SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER

CENTRAL

Medium Power PNP Transistors

DESCRIPTION: These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use

MICROSEMI

美高森美

Medium Power PNP Transistors

PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/441

MICROSEMI

美高森美

MEDIUM-POWER PNP TRANSISTORS

BOCA

博卡

PNP SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER

CENTRAL

Power Transistors

Power Transistors TO-66 Case

CENTRAL

POWER TRANSISTORS(4A,25W)

MOSPEC

统懋

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe area limits • Low collector saturation voltage APPLICATIONS • Suitable for use in as drivers, switches and medium-power amplifier and applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe area limits • Low collector saturation voltage APPLICATIONS • Suitable for use in as drivers, switches and medium-power amplifier and applications

SAVANTIC

MEDIUM POWER PNP TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors TO-66 Case

CENTRAL

MEDIUM POWER PNP TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER

CENTRAL

Medium Power PNP Transistors

DESCRIPTION: These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use

MICROSEMI

美高森美

isc Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain- hFE= 30-100@IC= -250mA • Wide Area of Safe Operation • Collector-Emitter Saturation Voltage- VCE(sat)= -0.6 V(Max)@ IC = -1A • High Gain • Low Saturation Voltage APPLICATIONS • Designed for use as drivers, switches and medium-power amplifier and genera

ISC

无锡固电

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors TO-39 Case

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-39 Case

CENTRAL

PNP HIGH VOLTAGE SILICON TRANSISTOR

PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397

MICROSEMI

美高森美

PNP POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315

MICROSEMI

美高森美

PNP POWER SILICON TRANSISTOR

文件:58.03 Kbytes Page:2 Pages

MICROSEMI

美高森美

PNP POWER SILICON TRANSISTOR

文件:65.48 Kbytes Page:2 Pages

MICROSEMI

美高森美

PNP POWER SILICON TRANSISTOR

文件:124.26 Kbytes Page:3 Pages

MICROSEMI

美高森美

PNP SILICON POWER TRANSISTOR

文件:430.55 Kbytes Page:2 Pages

CENTRAL

SILICON PNP POWER TRANSISTORS

文件:339.27 Kbytes Page:2 Pages

CENTRAL

Silicon PNP Power Transistors

文件:117.34 Kbytes Page:3 Pages

SAVANTIC

Bipolar PNP Device in a Hermetically sealed TO66

文件:15.18 Kbytes Page:1 Pages

SEME-LAB

封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

CENTRAL

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

CENTRAL

三极管

MOSPEC

统懋

Bipolar Junction Transistors

TTELEC

PNP POWER SILICON TRANSISTOR

文件:58.03 Kbytes Page:2 Pages

MICROSEMI

美高森美

PNP SILICON POWER TRANSISTOR

文件:430.55 Kbytes Page:2 Pages

CENTRAL

SILICON PNP POWER TRANSISTORS

文件:339.27 Kbytes Page:2 Pages

CENTRAL

PNP POWER SILICON TRANSISTOR

文件:124.26 Kbytes Page:3 Pages

MICROSEMI

美高森美

SILICON PNP POWER TRANSISTORS

文件:339.27 Kbytes Page:2 Pages

CENTRAL

PNP SILICON POWER TRANSISTOR

文件:430.55 Kbytes Page:2 Pages

CENTRAL

包装:散装 描述:PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Bipolar PNP Device in a Hermetically sealed TO66

文件:15.18 Kbytes Page:1 Pages

SEME-LAB

isc Silicon PNP Power Transistor

文件:265.48 Kbytes Page:2 Pages

ISC

无锡固电

Bipolar PNP Device in a Hermetically sealed TO66

文件:15.3 Kbytes Page:1 Pages

SEME-LAB

Bipolar PNP Device in a Hermetically sealed TO66

文件:15.18 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:117.34 Kbytes Page:3 Pages

SAVANTIC

PNP SILICON POWER TRANSISTOR

文件:430.55 Kbytes Page:2 Pages

CENTRAL

SILICON PNP POWER TRANSISTORS

文件:339.27 Kbytes Page:2 Pages

CENTRAL

PNP POWER SILICON TRANSISTOR

文件:58.03 Kbytes Page:2 Pages

MICROSEMI

美高森美

PNP POWER SILICON TRANSISTOR

文件:124.26 Kbytes Page:3 Pages

MICROSEMI

美高森美

PNP POWER SILICON TRANSISTOR

文件:65.48 Kbytes Page:2 Pages

MICROSEMI

美高森美

2N374产品属性

  • 类型

    描述

  • VCBO(V):

    60

  • VCEO(V):

    80

  • PD(W):

    25

  • PACKAGE:

    TO-66

  • PNP:

    2N3740

  • HFE(Min/Max):

    30/100

  • IC/VCE(A/V):

    0.25/1.0

  • VCE(SAT)(V):

    0.6

  • IC / IB(A/mA):

    1.0/125

更新时间:2026-5-15 15:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
nes
25+
500000
行业低价,代理渠道
MICROSEMI
24+
SMD
1680
MICROSEMI专营品牌进口原装现货假一赔十
MSC
25+
680
公司优势库存 热卖中!!!
MSCL
三年内
1983
只做原装正品
NES
2447
TO-66
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MICROCHIP
23+
7300
专注配单,只做原装进口现货
N/A
22+
TO
20000
公司只有原装 品质保证
NES
24+
TO-3
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
原厂
2540+
TO-66
6852
只做原装正品假一赔十为客户做到零风险!!
N/A
81+
TO
38
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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