isc Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain- hFE= 30-100@IC= -250mA • Wide Area of Safe Operation • Collector-Emitter Saturation Voltage- VCE(sat)= -0.6 V(Max)@ IC = -1A • High Gain • Low Saturation Voltage APPLICATIONS • Designed for use as drivers, switches and medium-power amplifier and genera

POWER TRANSISTORS PNP SILICON

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POWER TRANSISTORS(4A,25W)

Medium Power PNP Transistors

PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/441

PNP SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER

Medium Power PNP Transistors

DESCRIPTION: These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use

PNP POWER SILICON TRANSISTOR

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