isc Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain- hFE= 30-100@IC= -250mA • Wide Area of Safe Operation • Collector-Emitter Saturation Voltage- VCE(sat)= -0.6 V(Max)@ IC = -1A • High Gain • Low Saturation Voltage APPLICATIONS • Designed for use as drivers, switches and medium-power amplifier and genera

POWER TRANSISTORS PNP SILICON

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Medium Power PNP Transistors

PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/441

PNP SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER

Power Transistors

Power Transistors TO-66 Case

POWER TRANSISTORS(4A,25W)

PNP POWER SILICON TRANSISTOR

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