Standard Series Glass Encapsulated Thermistors

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：THERMISTOR NTC 2MOHM 4140K DO35 传感器，变送器 温度传感器 - NTC 热敏电阻器

Polypropylene Film Capacitors for Power Semiconductor Circuits

文件：376.9 Kbytes Page：3 Pages

Power semiconductor module protection - High pulse and

文件：661.94 Kbytes Page：5 Pages

Power semiconductor module protection - High pulse and

文件：661.94 Kbytes Page：5 Pages

Power semiconductor module protection - High pulse and

文件：661.94 Kbytes Page：5 Pages

FILM, PAPER-FILM CAPACITORS

Power semiconductor module protection - High pulse and rms current ??Multiple Leads

文件：433.61 Kbytes Page：11 Pages

Radial Leaded Polypropylene Film Capacitors with Double Sided Metallized Electrodes

文件：402.33 Kbytes Page：9 Pages

Radial Leaded Polypropylene Film Capacitors with Double Sided Metallized Electrodes

文件：402.33 Kbytes Page：9 Pages

Power semiconductor module protection - High pulse and rms current ??Multiple Leads

文件：433.61 Kbytes Page：11 Pages

FILM, PAPER-FILM CAPACITORS

FILM, PAPER-FILM CAPACITORS

Power semiconductor module protection - High pulse and rms current ??Multiple Leads

文件：433.61 Kbytes Page：11 Pages

Power semiconductor module protection - High pulse and rms current ??Multiple Leads

文件：433.61 Kbytes Page：11 Pages

Power semiconductor module protection - High pulse and rms current ??Multiple Leads

文件：433.61 Kbytes Page：11 Pages

Power semiconductor module protection - High pulse and rms current ??Multiple Leads

文件：433.61 Kbytes Page：11 Pages

Power semiconductor module protection - High pulse and rms current ??Multiple Leads

文件：433.61 Kbytes Page：11 Pages

Power semiconductor module protection - High pulse and rms current ??Multiple Leads

文件：433.61 Kbytes Page：11 Pages

Power semiconductor module protection - High pulse and rms current ??Multiple Leads

文件：433.61 Kbytes Page：11 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.