Optimized for Switching

Features • International standard package miniBLOC • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current IGBT • Low VCE(sat) for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Low collector-to-case capaci

Optimized for Switching

HiPerFAST IGBT

Features ● International standard package miniBLOC (ISOTOP compatible) ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on - drive

HiPerFAST IGBT

Features ● International standard package miniBLOC (ISOTOP compatible) ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on - drive

HiPerFASTTM IGBT

Features • International standard package miniBLOC • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicit

HiPerFAST IGBT

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