HiPerFAST IGBT

Features ● International standard package miniBLOC (ISOTOP compatible) ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on - drive

封装/外壳：SOT-227-4，miniBLOC 包装：散装 描述：IGBT MOD 600V 200A 600W SOT227B 分立半导体产品 晶体管 - IGBT - 模块

IGBT 300A 600V SOT-227B

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Optimized for Switching

Features • International standard package miniBLOC • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current IGBT • Low VCE(sat) for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Low collector-to-case capaci

封装/外壳：SOT-227-4，miniBLOC 包装：盒 描述：IGBT MOD 600V 200A 700W SOT227B 分立半导体产品 晶体管 - IGBT - 模块

HiPerFAST IGBT

Features ● International standard package miniBLOC (ISOTOP compatible) ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) - for minimum on-state conduction losses ● MOS Gate turn-on - drive

HiPerFASTTM IGBT

Features • International standard package miniBLOC • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicit

Ultrafast Rectifier Module ,200A

Features: • Two fully independent diodes • Fully insulated package • Ultrafast ,soft reverse recovery,with high operation junction temperature (150℃ Tj ) • Lo forward voltage drop • Optimized for power conversion:welding and industrial SMPS applications • Easy to use and parallel •Industr

HiPerFAST IGBT

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