封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT） 描述：SMALL SIGNAL SCHOTTKY BARRIER DI 分立半导体产品 二极管 - 整流器 - 单

Low-Voltage High-Speed Switching

Low-Voltage High-Speed Switching ● AEC-Q101 Qualified (Note1) ● Low forward voltage: VF(2) = 0.42 V (typ.) ● Low reverse current: IR = 500 nA (max) ● Small package: SC-59

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

Low-Voltage High-Speed Switching ● AEC-Q101 Qualified (Note1) ● Low forward voltage: VF(2) = 0.42 V (typ.) ● Low reverse current: IR = 500 nA (max) ● Small package: SC-59

LOW VOLTAGE HIGH SPEED SWITCHING

Features ● Low forward voltage: VF = 0.42 V(Typ) ● Low reverse current: IR =500 nA(Max) ● Small packag : SC-59(SOT-23MOD)

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

For low voltage high speed switching application Features • Low forward voltage • Low reverse current

TOSHIBA Diode Silicon Epitaxial Planar Type

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