DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

Low-Voltage High-Speed Switching ● AEC-Q101 Qualified (Note1) ● Low forward voltage: VF(2) = 0.42 V (typ.) ● Low reverse current: IR = 500 nA (max) ● Small package: SC-59

Low-Voltage High-Speed Switching

Low-Voltage High-Speed Switching ● AEC-Q101 Qualified (Note1) ● Low forward voltage: VF(2) = 0.42 V (typ.) ● Low reverse current: IR = 500 nA (max) ● Small package: SC-59

LOW VOLTAGE HIGH SPEED SWITCHING

Features ● Low forward voltage: VF = 0.42 V(Typ) ● Low reverse current: IR =500 nA(Max) ● Small packag : SC-59(SOT-23MOD)

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

For low voltage high speed switching application Features • Low forward voltage • Low reverse current

Small-signal Schottky barrier diode

Feature：Low leakage current\nInternal Connection：Common cathode\nNumber of Circuits：2\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Average Forward Current IO 0.05 A \nReverse Voltage VR 10 V ;

TOSHIBA Diode Silicon Epitaxial Planar Type

文件：175.36 Kbytes Page：3 Pages

Low-Voltage High-Speed Switching

Low-Voltage High-Speed Switching ● AEC-Q101 Qualified (Note1) ● Low forward voltage: VF(2) = 0.42 V (typ.) ● Low reverse current: IR = 500 nA (max) ● Small package: SC-59

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT） 描述：SMALL SIGNAL SCHOTTKY BARRIER DI 分立半导体产品 二极管 - 整流器 - 单

TOSHIBA Diode Silicon Epitaxial Planar Type

文件：175.36 Kbytes Page：3 Pages