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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5523BUR | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 |   | |
1N5523BUR | Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | |
Low Voltage Avalanche 500 mW Zener Diodes DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437 | Microsemi 美高森美 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from | KNOX | | ||
LOW VOLTAGE AVALANCHE DIODES DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437 | Microsemi 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
ZENER DIODE, 500mW 文件：111.15 Kbytes Page：2 Pages | Microsemi 美高森美 | | ||
封装/外壳：DO-213AA 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | Microchip 微芯科技 | | ||
封装/外壳：DO-213AA 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | Microchip 微芯科技 | |
1N5523BUR产品属性
- 类型
描述
- 型号
1N5523BUR
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
24+ |
DO213AA |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
APD |
24+ |
NA/ |
3320 |
原装现货,当天可交货,原型号开票 |
|||
APD |
12+ |
军品二级管 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APD |
22+ |
DO-35 |
5000 |
||||
MSC |
500 |
公司优势库存 热卖中!!! |
|||||
APD |
21+ |
军品二级管 |
216 |
原装现货假一赔十 |
|||
ADP |
24+ |
SMD |
18700 |
||||
ADP |
2023+ |
NA |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
AVAGO/安华高 |
24+ |
52500 |
只做全新原装进口现货 |
||||
Microsemi |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
1N5523BUR规格书下载地址
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1N5523BUR数据表相关新闻
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DdatasheetPDF页码索引
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