型号 功能描述 生产厂家 企业 LOGO 操作
1N5523A

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5523A

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

1N5523A

LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES

LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N5523A

封装/外壳:DO-204AH,DO-35,轴向 包装:卷带(TR) 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MICROCHIP

微芯科技

Low Voltage Avalanche 500 mW Zener Diodes DO-35

FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437

MICROSEMI

美高森美

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from

KNOX

LOW VOLTAGE AVALANCHE DIODES DO-35

FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437

MICROSEMI

美高森美

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

封装/外壳:DO-204AH,DO-35,轴向 包装:卷带(TR) 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MICROCHIP

微芯科技

0.5W 5.1V 10% Zener Diode

DIGITRON

0.5W 5.1V 10% Zener Diode

DIGITRON

0.5W 5.1V 10% Zener Diode

DIGITRON

1N5523A产品属性

  • 类型

    描述

  • 型号

    1N5523A

  • 制造商

    JGD

  • 制造商全称

    Jinan Gude Electronic Device

  • 功能描述

    0.4W LOW VOLTAGE AVALANCHE DIODES

更新时间:2026-1-27 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microchip Technology / Atmel
25+
DO-213AA-2
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
MXD
23+
NA
682
专做原装正品,假一罚百!
MOTOROLA
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
APD
24+
SMD
18700
MOT
25+
5
公司优势库存 热卖中!
AVAGO/安华高
2540+
NA
8595
只做原装正品假一赔十为客户做到零风险!!
MOTOROLA/摩托罗拉
25+
NA
880000
明嘉莱只做原装正品现货
Microchip Technology / Atmel
25+
DO-213AA-2
6843
样件支持,可原厂排单订货!
AVAGO/安华高
24+
52500
只做全新原装进口现货
APD
2023+
NA
6893
十五年行业诚信经营,专注全新正品

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