位置：首页 > IC中文资料第6374页 > 1N5523A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5523A | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 |   | |
1N5523A | 0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | |
1N5523A | LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N5523A | 封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | | ||
0.5W 5.1V 10% Zener Diode | DIGITRON | | ||
0.5W 5.1V 10% Zener Diode | DIGITRON | | ||
0.5W 5.1V 10% Zener Diode | DIGITRON | | ||
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from | KNOX | | ||
LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED | CDI-DIODE | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | |
1N5523A产品属性
- 类型
描述
- 型号
1N5523A
- 制造商
JGD
- 制造商全称
Jinan Gude Electronic Device
- 功能描述
0.4W LOW VOLTAGE AVALANCHE DIODES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology / Atmel |
25+ |
DO-213AA-2 |
6843 |
样件支持,可原厂排单订货! |
|||
Microchip Technology / Atmel |
25+ |
DO-213AA-2 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
MOT |
25+ |
5 |
公司优势库存 热卖中! |
||||
MXD |
23+ |
NA |
682 |
专做原装正品,假一罚百! |
|||
APD |
10+ |
军品二级管 |
35 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APD |
24+ |
NA |
2415 |
进口原装正品优势供应 |
|||
AVAGO/安华高 |
2540+ |
NA |
8595 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MOTOROLA/摩托罗拉 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
AVAGO/安华高 |
24+ |
52500 |
只做全新原装进口现货 |
||||
APD |
24+ |
SMD |
18700 |
1N5523A芯片相关品牌
1N5523A规格书下载地址
1N5523A参数引脚图相关
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- 1N5522UR
- 1N5522TR-1
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- 1N5522DUR-1
- 1N5522DUR
- 1N5522DTR-1
- 1N5522D-1
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- 1N5522CURTR-1
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- 1N5520B
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- 1N5519D
- 1N5519C
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1N5523A数据表相关新闻
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2019-12-2
DdatasheetPDF页码索引
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