位置：首页 > IC中文资料第6374页 > 1N5523B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5523B | LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated |  |   |
1N5523B | LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
1N5523B | 0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 |  | |
1N5523B | 封装/外壳：DO-204AA，DO-7，轴向 包装：卷带（TR） 描述：ZENER DIODE 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | |
1N5523B | LOWREVERSELEAKAGECHARACTERISTICS 文件：114.68 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom | KNOXKnox Semiconductor, Inc Knox Semiconductor, Inc |  | | |
LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
包装：散装 描述：DIODE ZENER 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
ZENERDIODE,500mW 文件：111.15 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N5523B产品属性
- 类型
描述
- 型号
1N5523B
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
9947 |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
MSCI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
APD |
10+ |
军品二级管 |
35 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MXD |
23+ |
NA |
682 |
专做原装正品,假一罚百! |
|||
APD |
23+ |
军品二级管 |
2535 |
原厂原装正品 |
|||
APD |
10+ |
44 |
原装库存有订单来谈优势 |
||||
APD |
22+ |
DO-35 |
5000 |
||||
APD |
2017+ |
SMD |
18700 |
||||
APD |
23+ |
50000 |
全新原装现货热卖 |
||||
MICROCHIP(美国微芯) |
23+ |
DO7 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
1N5523B芯片相关品牌
1N5523B规格书下载地址
1N5523B参数引脚图相关
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 256p
- 2531
- 240m
- 2222a
- 20kv
- 20700
- 1N5527B
- 1N5527A
- 1N5527
- 1N5526D
- 1N5526C
- 1N5526B
- 1N5526A
- 1N5526
- 1N5525D
- 1N5525C
- 1N5525B
- 1N5525A
- 1N5525
- 1N5524D
- 1N5524C
- 1N5524B
- 1N5524A
- 1N5524
- 1N5523UR-1
- 1N5523UR
- 1N5523DUR-1
- 1N5523DUR
- 1N5523DTR-1
- 1N5523D-1
- 1N5523D
- 1N5523CURTR-1
- 1N5523CUR-1
- 1N5523CUR
- 1N5523CTR-1
- 1N5523C-1
- 1N5523C
- 1N5523BURTR-1
- 1N5523BUR-1
- 1N5523BUR
- 1N5523B-1JANTXV
- 1N5523B-1JANTX
- 1N5523B-1
- 1N5523B(DO35)
- 1N5523AURTR-1
- 1N5523AUR-1
- 1N5523AUR
- 1N5523ATR-1
- 1N5523A-1
- 1N5523A
- 1N5523-1
- 1N5523
- 1N5522UR
- 1N5522TR-1
- 1N5522DURTR-1
- 1N5522DUR-1
- 1N5522DUR
- 1N5522DTR-1
- 1N5522D-1
- 1N5522D
- 1N5522CURTR-1
- 1N5522CUR-1
- 1N5522CUR
- 1N5522CTR-1
- 1N5522C
- 1N5522B
- 1N5522A
- 1N5522
- 1N5521D
- 1N5521C
- 1N5521B
- 1N5521A
- 1N5521
- 1N5520D
- 1N5520C
- 1N5520B
- 1N5520A
- 1N5520
- 1N552
- 1N5519D
- 1N5519C
1N5523B数据表相关新闻
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1N5819W
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2023-7-201N5401
1N5401，当天发货0755-82732291全新原装现货或门市自取.
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2019-12-2
DdatasheetPDF页码索引
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