LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

0.5W Zener Diode

Features  Sharp Reverse Characteristics  Low Reverse Current Levels  High Reliability Gold Back Metal  High Reliability Tested Grades.

封装/外壳：DO-204AA，DO-7，轴向 包装：卷带（TR） 描述：ZENER DIODE 分立半导体产品 二极管 - 齐纳 - 单

LOW REVERSE LEAKAGE CHARACTERISTICS

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0.5W 5.1V 5% Zener Diode

Low Voltage Avalanche 500 mW Zener Diodes DO-35

FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from

LOW VOLTAGE AVALANCHE DIODES DO-35

FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

包装：散装 描述：DIODE ZENER 分立半导体产品 二极管 - 齐纳 - 单

0.5W 5.1V 5% Zener Diode

Zener Diodes

ZENER DIODE, 500mW

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