位置:首页 > IC中文资料第5832页 > 1N55
1N55价格
参考价格:¥23.5597
型号:1N5529B 品牌:Misc 备注:这里有1N55多少钱,2024年最近7天走势,今日出价,今日竞价,1N55批发/采购报价,1N55行情走势销售排行榜,1N55报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
1N55 | GERMANIUMDOIDES GERMANIUMDIODES | AACAmerican Accurate Components, Inc. 美国精密部件公司美国精密元件有限公司 | ||
1N55 | GERMANIUMDOIDES GERMANIUMDIODES | AACAmerican Accurate Components, Inc. 美国精密部件公司美国精密元件有限公司 | ||
1N55 | GERMANIUMDIODES 文件:1.97664 Mbytes Page:2 Pages | AMMSEMI American Microsemiconductor | ||
1N55 | GOLDBONDEDGERMANIUMDIODE 文件:44.85 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
1N55 | GERMANIUMDOIDES 文件:1.97664 Mbytes Page:2 Pages | AMMSEMI American Microsemiconductor | ||
STUDBASERECTIFIERS STUDBASERECTIFIERS(D04CASE)I0RATINGSTO6.0AMPERES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | |||
LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom | KNOXKnox Semiconductor, Inc Knox Semiconductor, Inc | |||
LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | |||
LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | |||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
0.5WZenerDiode Features SharpReverseCharacteristics LowReverseCurrentLevels HighReliabilityGoldBackMetal HighReliabilityTestedGrades. | SS Silicon Supplies | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom | KNOXKnox Semiconductor, Inc Knox Semiconductor, Inc | |||
LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |
1N55产品属性
- 类型
描述
- 型号
1N55
- 功能描述
SCHOTTKY RECTIERS SILICON RECTIFIER DIODES
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MSCI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
VISHAY |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
GSI |
22+ |
DO-41 |
100000 |
代理渠道/只做原装/可含税 |
|||
Vishay(威世) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
GS |
24+ |
SOD-64 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
MSC |
1130+ |
D0-13 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MICROSEMI/美高森美 |
2022 |
CASEE |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
UTC |
23/22+ |
TO251 |
6000 |
20年老代理.原厂技术支持 |
|||
MS |
23+ |
NA |
108 |
专做原装正品,假一罚百! |
|||
ADP |
11+ |
管子 |
146 |
原装库存有订单来谈优势 |
1N55规格书下载地址
1N55参数引脚图相关
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 256p
- 2531
- 240m
- 2222a
- 20kv
- 20700
- 1N5610JANTX
- 1N560
- 1N5556JANTX
- 1N5556
- 1N5555JANTX
- 1N5554US
- 1N5553US
- 1N5553
- 1N5552US
- 1N5552
- 1N5551US
- 1N5551
- 1N5550US
- 1N5550
- 1N5541BUR-1JANTX
- 1N5540B
- 1N5532BUR-1
- 1N5532B
- 1N5530BUR-1
- 1N5529B
- 1N5521A
- 1N5521
- 1N5520D
- 1N5520C
- 1N5520B
- 1N5520A
- 1N5520
- 1N552
- 1N5519D
- 1N5519C
- 1N5519B
- 1N5519A
- 1N5519
- 1N5518D
- 1N5518C
- 1N5518B
- 1N5518A
- 1N5518
- 1N5517
- 1N551
- 1N54A
- 1N5477A
- 1N5476A
- 1N5476
- 1N5475A
- 1N5475
- 1N5474A
- 1N5474
- 1N5473A
- 1N5473
- 1N5472A
- 1N5472
- 1N5471A
- 1N5471
- 1N5470A
- 1N5470
- 1N547
- 1N5469A
- 1N5469
- 1N5468A
- 1N5419E3
- 1N5418US
- 1N5418TR
- 1N5418
- 1N5417US
- 1N5416US
- 1N5408-TP
- 1N5408T-G
- 1N5408-T
- 1N5408RLG
- 1N5408G-T
- 1N5408GP-TP
- 1N5408G-B
- 1N5408-G
- 1N5408G
- 1N5408-E3/73
- 1N5408-E3/54
- 1N5408-B
- 1N5408
- 1N5407-TP
1N55数据表相关新闻
1N5819W
1N5819W
2024-3-61N5819HW-7-F
1N5819HW-7-F
2023-7-201N5401
1N5401,当天发货0755-82732291全新原装现货或门市自取.
2020-9-161N5822
1N5822,全新原装当天发货或门市自取0755-82732291.
2020-7-261N5400TR,1SMA22CAT3G,2114-250A/225K,2322640兴中扬电子科技
1N5400TR,1SMA22CAT3G,2114-250A/225K,2322640兴中扬电子科技
2019-12-21N5353B,专业军工IC,军工电子元器件销售,兴中扬电子,航空IC
1N5353B,专业军工IC,军工电子元器件销售,兴中扬电子,航空IC
2019-12-2
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80