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型号	功能描述	生产厂家企业	LOGO
1N5519	LOW VOLTAGE AVALANCHE DIODES DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437	Microsemi 美高森美	Microsemi
1N5519	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519	Low Voltage Avalanche 500 mW Zener Diodes DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437	Microsemi 美高森美	Microsemi
1N5519	LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from	KNOX	KNOX
1N5519	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
1N5519	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5519	SCHOTTKY RECTIERS SILICON RECTIFIER DIODES 文件：48.9 Kbytes Page：1 Pages	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
1N5519	Zener Diodes	Microchip 微芯科技	Microchip
1N5519	封装/外壳：DO-204AH，DO-35，轴向包装：卷带（TR）描述：VOLTAGE REGULATOR 分立半导体产品二极管 - 齐纳 - 单	Microchip 微芯科技	Microchip
1N5519-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519A	LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
1N5519A	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519A	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5519A-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519AUR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519AUR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519B	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519B	0.5W Zener Diode Features  Sharp Reverse Characteristics  Low Reverse Current Levels  High Reliability Gold Back Metal  High Reliability Tested Grades.	SS	SS
1N5519B	LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED	CDI-DIODE	CDI-DIODE
1N5519B	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5519B-1	LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED	CDI-DIODE	CDI-DIODE
1N5519B-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519BUR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519BUR	Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519BUR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519C	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5519C	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519C-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519CUR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519CUR	Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519CUR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519D	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519D	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5519D-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519DUR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519DUR	Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519DUR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519UR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519UR	Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519UR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5519A	封装/外壳：DO-204AH，DO-35，轴向包装：卷带（TR）描述：VOLTAGE REGULATOR 分立半导体产品二极管 - 齐纳 - 单	Microchip 微芯科技	Microchip
1N5519AUR-HR	0.5W 3.6V 10% Zener Diode	DIGITRON	DIGITRON
1N5519B	Low Voltage Avalanche Zener	Microchip 微芯科技	Microchip
1N5519B	LOW REVERSE LEAKAGE CHARACTERISTICS 文件：114.68 Kbytes Page：2 Pages	Microsemi 美高森美	Microsemi
1N5519BUR-1	ZENER DIODE, 500mW 文件：111.15 Kbytes Page：2 Pages	Microsemi 美高森美	Microsemi

1N5519产品属性

类型
描述
型号
1N5519
制造商
MICROSEMI
制造商全称
Microsemi Corporation
功能描述
Low Voltage Avalanche 500 mW Zener Diodes DO-35

1N5519供应商更多...

更新时间：2025-10-10 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	1N5519BUR-1/TR	MICROCHIP(美国微芯)	24+	DO213AA	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市威雅利发展有限公司	1N5521B	CODZ	08+	二极管	100	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
千层芯半导体(深圳)有限公司	1N5521B	CODZ	24+	SMD	18700		询价
标准国际(香港)有限公司	1N5521B	1N5521B		135	135		询价
深圳市中联芯电子有限公司	1N552	MOTOROLA/摩托罗拉	2023+	MODULE	1494	主打螺丝模块系列	询价
深圳市鸿昌盛电子科技有限公司	1N5519BUR-1JANTX	MSC	2007/2008		15	公司现货	询价
深圳市达恩科技有限公司	1N5521B	CODZ	24+		2170	进口原装正品优势供应	询价
深圳市福田区亿兴成电子商行	1N5521B	CODZ	NA	6688	8	现货库存	询价
深圳市安富世纪电子有限公司	1N5521B	CODZ	23+	二极管	100	全新原装正品现货,支持订货	询价
深圳市芯为科技有限公司	1N5519B(DO35)	Microsemi	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价

1N5519芯片相关品牌

1N5519规格书下载地址

1N5519参数引脚图相关

1N5519数据表相关新闻

1N5819W
1N5819W
2024-3-6
1N5819HW-7-F
1N5819HW-7-F
2023-7-20
1N5401
1N5401，当天发货0755-82732291全新原装现货或门市自取.
2020-9-16
1N5822
1N5822，全新原装当天发货或门市自取0755-82732291.
2020-7-26
1N5400TR，1SMA22CAT3G，2114-250A/225K，2322640兴中扬电子科技
1N5400TR，1SMA22CAT3G，2114-250A/225K，2322 640 兴中扬电子科技
2019-12-2
1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC
1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC
2019-12-2

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1N5519产品属性

1N5519供应商更多...

1N5519芯片相关品牌

1N5519规格书下载地址

1N5519参数引脚图相关

1N5519数据表相关新闻

1N5819W

1N5819HW-7-F

1N5401

1N5822

1N5400TR，1SMA22CAT3G，2114-250A/225K，2322640兴中扬电子科技

1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC

DdatasheetPDF页码索引