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型号	功能描述	生产厂家&企业
1N5519	0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES Lowzenernoisespecified Lowzenerimpedance Lowleakagecurrent Hermeticallysealedglasspackage	JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司
1N5519	LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom	KNOX Knox Semiconductor, Inc
1N5519	LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519	LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519	0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES Lowzenernoisespecified Lowzenerimpedance Lowleakagecurrent Hermeticallysealedglasspackage	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
1N5519	SCHOTTKYRECTIERSSILICONRECTIFIERDIODES 文件：48.9 Kbytes Page：1 Pages	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
1N5519	封装/外壳：DO-204AH，DO-35，轴向包装：卷带（TR）描述：VOLTAGE REGULATOR 分立半导体产品二极管 - 齐纳 - 单	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司
1N5519-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519A	LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
1N5519A	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519A	0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES Lowzenernoisespecified Lowzenerimpedance Lowleakagecurrent Hermeticallysealedglasspackage	JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司
1N5519A-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519AUR	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519AUR-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519B	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519B	LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED	CDI-DIODE Compensated Deuices Incorporated
1N5519B	0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES Lowzenernoisespecified Lowzenerimpedance Lowleakagecurrent Hermeticallysealedglasspackage	JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司
1N5519B	0.5WZenerDiode Features SharpReverseCharacteristics LowReverseCurrentLevels HighReliabilityGoldBackMetal HighReliabilityTestedGrades.	SS Silicon Supplies
1N5519B-1	LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED	CDI-DIODE Compensated Deuices Incorporated
1N5519B-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519BUR	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519BUR	LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519BUR-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519C	0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES Lowzenernoisespecified Lowzenerimpedance Lowleakagecurrent Hermeticallysealedglasspackage	JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司
1N5519C	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519C-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519CUR	LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519CUR	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519CUR-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519D	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519D	0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES Lowzenernoisespecified Lowzenerimpedance Lowleakagecurrent Hermeticallysealedglasspackage	JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司
1N5519D-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519DUR	LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519DUR	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519DUR-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519UR	LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519UR	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519UR-1	LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519A	封装/外壳：DO-204AH，DO-35，轴向包装：卷带（TR）描述：VOLTAGE REGULATOR 分立半导体产品二极管 - 齐纳 - 单	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司
1N5519B	LOWREVERSELEAKAGECHARACTERISTICS 文件：114.68 Kbytes Page：2 Pages	MicrosemiMicrosemi Corporation 美高森美美高森美公司
1N5519BUR-1	ZENERDIODE,500mW 文件：111.15 Kbytes Page：2 Pages	MicrosemiMicrosemi Corporation 美高森美美高森美公司

1N5519产品属性

类型
描述
型号
1N5519
制造商
MICROSEMI
制造商全称
Microsemi Corporation
功能描述
Low Voltage Avalanche 500 mW Zener Diodes DO-35

1N5519供应商更多...

更新时间：2025-7-30 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	1N5519BUR-1/TR	MICROCHIP(美国微芯)	24+	DO213AA	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市威雅利发展有限公司	1N5521B	CODZ	08+	二极管	100	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
千层芯半导体(深圳)有限公司	1N5521B	CODZ	24+	SMD	18700		询价
深圳市鸿昌盛电子科技有限公司	1N5519BUR-1JANTX	MSC	2007/2008		15	公司现货	询价
标准国际(香港)有限公司	1N5521B	1N5521B		135	135		询价
深圳市中联芯电子有限公司	1N552	MOTOROLA/摩托罗拉	2023+	MODULE	1494	主打螺丝模块系列	询价
深圳市永贝尔科技有限公司	1N5519B	CDI-DIODE	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市科翼源电子有限公司	1N5521B	CODZ	23+	二极管	2600	原厂原装正品	询价
深圳市达恩科技有限公司	1N5521B	CODZ	24+		2170	进口原装正品优势供应	询价
深圳市航润创能电子集团有限公司	1N5521B	CODZ	21+	二极管	100	原装现货假一赔十	询价

1N5519芯片相关品牌

1N5519规格书下载地址

1N5519参数引脚图相关

1N5519数据表相关新闻

1N5819W
1N5819W
2024-3-6
1N5819HW-7-F
1N5819HW-7-F
2023-7-20
1N5401
1N5401，当天发货0755-82732291全新原装现货或门市自取.
2020-9-16
1N5822
1N5822，全新原装当天发货或门市自取0755-82732291.
2020-7-26
1N5400TR，1SMA22CAT3G，2114-250A/225K，2322640兴中扬电子科技
1N5400TR，1SMA22CAT3G，2114-250A/225K，2322640兴中扬电子科技
2019-12-2
1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC
1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC
2019-12-2

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1N5519产品属性

1N5519供应商更多...

1N5519芯片相关品牌

1N5519规格书下载地址

1N5519参数引脚图相关

1N5519数据表相关新闻

1N5819W

1N5819HW-7-F

1N5401

1N5822

1N5400TR，1SMA22CAT3G，2114-250A/225K，2322640兴中扬电子科技

1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC

DdatasheetPDF页码索引