位置：首页 > IC中文资料第6341页 > 1N5519A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5519A | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 |   | |
1N5519A | 0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | |
1N5519A | LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N5519A | 封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | Microchip 微芯科技 | | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from | KNOX | | ||
LOW VOLTAGE AVALANCHE DIODES DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437 | Microsemi 美高森美 | | ||
SCHOTTKY RECTIERS SILICON RECTIFIER DIODES 文件：48.9 Kbytes Page：1 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | Microchip 微芯科技 | | ||
0.5W 3.6V 10% Zener Diode | DIGITRON | | ||
0.5W 3.6V 10% Zener Diode | DIGITRON | |
1N5519A产品属性
- 类型
描述
- 型号
1N5519A
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CODZ |
23+ |
二极管 |
2600 |
原厂原装正品 |
|||
CODZ |
23+ |
二极管 |
100 |
全新原装正品现货,支持订货 |
|||
Microsemi |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
CODZ |
24+ |
SMD |
18700 |
||||
MICROCHIP(美国微芯) |
24+ |
DO213AA |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
MOTOROLA/摩托罗拉 |
2023+ |
MODULE |
1494 |
主打螺丝模块系列 |
|||
1N5521B |
135 |
135 |
|||||
CODZ |
NA |
6688 |
8 |
现货库存 |
|||
CODZ |
08+ |
二极管 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CODZ |
24+ |
2170 |
进口原装正品优势供应 |
1N5519A规格书下载地址
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1N5519A数据表相关新闻
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DdatasheetPDF页码索引
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