封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE GEN PURP 50V 200MA DO35 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 50V 300MA DO35 分立半导体产品 二极管 - 整流器 - 单

High Conductance Ultra Fast Diode

High Conductance Ultra Fast Diodes • trr... 4.0 ns (MAX) • VF ... 1.0 V (MAX) @ 200 mA

High-speed diodes

DESCRIPTION The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General app

Silicon Epitaxial Planar Diode

FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed switch and general purpose use in computer and i

Switching diode

Features 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. Application High-speed switching

SIGNAL DIODE

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