High-speed diodes

DESCRIPTION The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General app

Silicon Epitaxial Planar Diode

FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed switch and general purpose use in computer and i

Switching diode

Features 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. Application High-speed switching

High Conductance Ultra Fast Diode

High Conductance Ultra Fast Diodes • trr... 4.0 ns (MAX) • VF ... 1.0 V (MAX) @ 200 mA

SMALL SIGNAL SWITCHING DIODE

FEATURES • Silicon epitaxial planar diode • Fast swithching diodes • 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34

Small Signal Diodes

FEATURES ◆ Silicon Epitaxial Planar Diode ◆ For general purpose and switching. ◆ This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4150W and the MiniMELF case with the type designation LL4150.

SILICON EPITAXIAL PLANAR DIODES

Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34.

FAST SWITCHING DIODE

Features • Ideal for Fast Logic Applications • Ultra Fast Switching • High Reliability • High Conductance

200mA Low Power, Switching

Silicon Planar Diodes

Ultrafast Recovery Rectifier Diodes Features Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, High-speed switching Commercial grade 1) Mechanical Da

silicon diode

SILICON DIODE

Switching diode

Features 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. Application High-speed switching

HIGH SPEED SILICON SWITCHING DIODE

HIGH SPEED SILICON SWITCHING DIODE FEATURES General Purpose used in Computer and Industrial Applications

SMALL SIGNAL SWITCHING DIODE

VOLTAGE RANGE: 50 V CURRENT: 150 m A FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: DO-35,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: 0.004 ounces, 0.13 grams

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 600 mA • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g

FAST SWITCHING SURFACE MOUNT DIODES

VOLTAGE 50 Volt POWER 500 mWatt FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • Lead free in compliance with EU RoHS 2011/65/EU directive MECHANICAL DATA • Case: Mini Melf, Glass • Terminals: Soldera

500mW 75 Volt Silicon Epitaxial Diode

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Current Leakage • Compression Bond Construction • Low Cost • Marking : Cathode band and type number • Moisture Sensitivity Level 1

SILICON EPITAXIAL PLANAR DIODE

Silicon Expitxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also avaible in glass case DO-34

TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low leakage * Low forward voltage * High speed switching * High current capability * High reliability * Low power loss, high efficiency

COMPUTER DIODE Switching

HIGH-SPEED SWITCHING DIODE

FEATURES ● High reliability ● High forward current capability APPLICATIONS ● High speed switch and general purpose use in computer and industrial applications

HIGH SPEED SWITCHING DIODES

VOLTAGE：50-100V CURRENT：0.15 to 0.2 A FEATURES • Silicon epitaxial planar diodes • Low power loss, high efficiency • Low lekage • Low forward voltagh • High speed switching • High current capability • High reliability MECHANICAL DATA • Case:Glass sealed case • Lead: MIL-STD- 202E, Metho

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 600 mA • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g

HIGH SPEED SILICON SWITCHING DIODE

HIGH SPEED SILICON SWITCHING DIODE DO-35 Glass Axial Package FEATURES General Purpose used in Computer and Industrial Applications

Hermetically Sealed

Features ● Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 ● Metallurgically Bonded ● Hermetically Sealed ● Double Plug Construction

Silicon switching diode

DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3600, 1N4150, silicon planar epitaxial diode is characterized by its miniature size, ultra fast switching speed, low capacitance, low leakage, and high conductance. Accordingly, it is ideally suited for applications such as pulse applications, avalanche ci

SWITCHING RECTIFIER

SWITCHING RECTIFIER

Small Signal Devices

SWITCHING DIODES

Small Signal Devices

SWITCHING DIODES

Small Signal Devices

SWITCHING DIODES

Small Signal Fast Switching Diodes

FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed switch and general purpose use in computer and industrial applica

FAST SWITCHING SURFACE MOUNT DIODES

FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • Lead free in compliance with EU RoHS 2011/65/EU directive

50V Detection switch tube

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SMALL SIGNAL SWITCHING DIODE

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1N4150 SIGNAL DIODE

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General Purpose Diodes

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Ultrafast Switching Si-Planar Diodes

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Silicon Switching Diode DO-35 Glass Package

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Small Signal Fast Switching Diodes

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Switching diode

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Silicon Switching Diode DO-35 Glass Package

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Diode Data

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SWITCHING DIODES

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SIGNAL DIODE

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Silicljeve planarne signalne diode Silicon planar signal diodes

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封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE GEN PURP 50V 200MA DO35 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：SIGNAL OR COMPUTER DIODE 分立半导体产品 二极管 - 整流器 - 单

Small Signal Fast Switching Diodes

小信号开关二极管

Diode 50V, 200mA Through Hole DO-204AH (DO-35)

Ultrafast Recovery Rectifier Diodes

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Switching diode

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Small Signal Fast Switching Diodes

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Small Signal Switching Diodes

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200mA Axial Leaded Fast Switching Diode

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High-speed switching diode

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Switching diode

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Fast switiching speed

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FAST SWITCHING SURFACE MOUNT DIODES

FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • Lead free in compliance with EU RoHS 2011/65/EU directive

FAST SWITCHING SURFACE MOUNT DIODES

FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • Lead free in compliance with EU RoHS 2011/65/EU directive