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1N4150价格
参考价格：￥0.0780
型号：1N4150 品牌：Taitron 备注：这里有1N4150多少钱，2024年最近7天走势，今日出价，今日竞价，1N4150批发/采购报价，1N4150行情走势销售排行榜，1N4150报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N4150 | High-speeddiodes DESCRIPTION The1N4150and1N4151arehigh-speedswitchingdiodesfabricatedinplanartechnology,andencapsulatedinhermeticallysealedleadedglassSOD27(DO-35)packages. FEATURES •Hermeticallysealedleadedglass SOD27(DO-35)package •Highswitchingspeed:max.4ns •Generalapp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   |
1N4150 | SiliconEpitaxialPlanarDiode FEATURES •Siliconepitaxialplanardiode •Lowforwardvoltagedrop •AEC-Q101qualified •Highforwardcurrentcapability •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Highspeedswitchandgeneralpurposeuseincomputerandi | VishayVishay Siliconix 威世科技 |  | |
1N4150 | Switchingdiode Features 1)Glasssealedenvelope.(MSD,GSD) 2)Highspeed. 3)Highreliability. Application High-speedswitching | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | |
1N4150 | HighConductanceUltraFastDiode HighConductanceUltraFastDiodes •trr...4.0ns(MAX) •VF...1.0V(MAX)@200mA | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
1N4150 | SMALLSIGNALSWITCHINGDIODE FEATURES •Siliconepitaxialplanardiode •Fastswithchingdiodes •1N4149,1N4447,1N4449arealsoavaibleinglasscaseDO-34 | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 |  | |
1N4150 | SmallSignalDiodes FEATURES ◆SiliconEpitaxialPlanarDiode ◆Forgeneralpurposeandswitching. ◆Thisdiodeisalsoavailableinothercasestylesincluding:theSOD-123casewiththetypedesignation1N4150WandtheMiniMELFcasewiththetypedesignationLL4150. | GE GE Industrial Company |  | |
1N4150 | SILICONEPITAXIALPLANARDIODES Features SiliconEpitaxialPlanarDiodes forgeneralpurposeandswitching Thetypes1N4149,1N4447and1N4449arealsoavailable inglasscaseDO-34. | Good-Ark Good-Ark |  | |
1N4150 | FASTSWITCHINGDIODE Features •IdealforFastLogicApplications •UltraFastSwitching •HighReliability •HighConductance | DIODESDiodes Incorporated 达尔科技 |  | |
1N4150 | 200mALowPower,Switching
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
1N4150 | SiliconPlanarDiodes UltrafastRecoveryRectifierDiodes Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing, High-speedswitching Commercialgrade1) MechanicalDa | DiotecDIOTEC 德欧泰克 |  | |
1N4150 | silicondiode SILICONDIODE | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | |
1N4150 | Switchingdiode Features 1)Glasssealedenvelope.(MSD,GSD) 2)Highspeed. 3)Highreliability. Application High-speedswitching | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | |
1N4150 | HIGHSPEEDSILICONSWITCHINGDIODE HIGHSPEEDSILICONSWITCHINGDIODE FEATURES GeneralPurposeusedinComputerandIndustrialApplications | TEL TRANSYS Electronics Limited |  | |
1N4150 | SMALLSIGNALSWITCHINGDIODE VOLTAGERANGE:50V CURRENT:150mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:DO-35,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:0.004ounces,0.13grams | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | |
1N4150 | HIGHSPEEDSWITCHINGDIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.75V •Repetitivepeakforwardcurrent:max.600mA •Pb/RoHSFree MECHANICALDATA: Case:DO-35GlassCase Weight:approx.0.13g | SYNSEMI SynSemi，Inc. |  | |
1N4150 | FASTSWITCHINGSURFACEMOUNTDIODES VOLTAGE50VoltPOWER500mWatt FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •LeadfreeincompliancewithEURoHS2011/65/EUdirective MECHANICALDATA •Case:MiniMelf,Glass •Terminals:Soldera | PANJITPANJIT International Inc. 强茂強茂股份有限公司 |  | |
1N4150 | 500mW75VoltSiliconEpitaxialDiode Features •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation) •LowCurrentLeakage •CompressionBondConstruction •LowCost •Marking:Cathodebandandtypenumber •MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
1N4150 | SILICONEPITAXIALPLANARDIODE SiliconExpitxialPlanarDiode forgeneralpurposeandswitching. Thetypes1N4149,1N4447and1N4449arealsoavaible inglasscaseDO-34 | SEMTECH Semtech Corporation |  | |
1N4150 | TECHNICALSPECIFICATIONSOFHIGHSPEEDSWITCHINGDIODES VOLTAGERANGE-50to100VoltsCURRENT-0.075to0.2Ampere FEATURES *Siliconepitaxialplanardiodes *Lowleakage *Lowforwardvoltage *Highspeedswitching *Highcurrentcapability *Highreliability *Lowpowerloss,highefficiency | DCCOMDc Components 直流元件直流元件有限公司 |  | |
1N4150 | COMPUTERDIODESwitching
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N4150 | HIGH-SPEEDSWITCHINGDIODE FEATURES ●Highreliability ●Highforwardcurrentcapability APPLICATIONS ●Highspeedswitchandgeneralpurposeuseincomputerandindustrialapplications | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 |  | |
1N4150 | HIGHSPEEDSWITCHINGDIODES VOLTAGE：50-100VCURRENT：0.15to0.2A FEATURES •Siliconepitaxialplanardiodes •Lowpowerloss,highefficiency •Lowlekage •Lowforwardvoltagh •Highspeedswitching •Highcurrentcapability •Highreliability MECHANICALDATA •Case:Glasssealedcase •Lead:MIL-STD-202E,Metho | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 |  | |
1N4150 | HIGHSPEEDSWITCHINGDIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.75V •Repetitivepeakforwardcurrent:max.600mA •Pb/RoHSFree MECHANICALDATA: Case:DO-35GlassCase Weight:approx.0.13g | EIC EIC |  | |
1N4150 | HIGHSPEEDSILICONSWITCHINGDIODE HIGHSPEEDSILICONSWITCHINGDIODE DO-35 GlassAxialPackage FEATURES GeneralPurposeusedinComputerandIndustrialApplications | CDIL CDIL |  | |
1N4150 | HermeticallySealed Features ●AvailableinJAN,JANTX,andJANTXVper MIL-PRF-19500/231 ●MetallurgicallyBonded ●HermeticallySealed ●DoublePlugConstruction | MA-COM M/A-COM Technology Solutions, Inc. |  | |
1N4150 | Siliconswitchingdiode DESCRIPTION TheCENTRALSEMICONDUCTOR1N3600,1N4150,siliconplanarepitaxialdiodeischaracterizedbyitsminiaturesize,ultrafastswitchingspeed,lowcapacitance,lowleakage,andhighconductance.Accordingly,itisideallysuitedforapplicationssuchaspulseapplications,avalancheci | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
1N4150 | SWITCHINGRECTIFIER SWITCHINGRECTIFIER | DIGITRON Digitron Semiconductors |  | |
1N4150 | SmallSignalDevices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
1N4150 | SmallSignalDevices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
1N4150 | SmallSignalDevices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
1N4150 | SmallSignalFastSwitchingDiodes FEATURES •Siliconepitaxialplanardiode •Lowforwardvoltagedrop •Highforwardcurrentcapability •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Highspeedswitchandgeneralpurposeuseincomputer andindustrialapplica | VishayVishay Siliconix 威世科技 | | |
1N4150 | 50VDetectionswitchtube 文件：256.744 Kbytes Page：1 Pages |  | | |
1N4150 | SMALLSIGNALSWITCHINGDIODE 文件：396.31 Kbytes Page：2 Pages | DSK Diode Semiconductor Korea |  | |
1N4150 | 1N4150SIGNALDIODE 文件：332.9 Kbytes Page：2 Pages | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 |  | |
1N4150 | GeneralPurposeDiodes 文件：336.14 Kbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
1N4150 | UltrafastSwitchingSi-PlanarDiodes 文件：92.72 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
1N4150 | SiliconSwitchingDiodeDO-35GlassPackage 文件：78.84 Kbytes Page：1 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N4150 | SmallSignalFastSwitchingDiodes 文件：113.63 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | |
1N4150 | Switchingdiode 文件：50.11 Kbytes Page：3 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | |
1N4150 | SiliconSwitchingDiodeDO-35GlassPackage 文件：72.86 Kbytes Page：1 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N4150 | DiodeData 文件：138.9 Kbytes Page：1 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 |  | |
1N4150 | SWITCHINGDIODES 文件：34.93 Kbytes Page：2 Pages | CDI-DIODE Compensated Deuices Incorporated |  | |
1N4150 | SIGNALDIODE 文件：16.2 Kbytes Page：1 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 |  | |
1N4150 | UltrafastRecoveryRectifierDiodes 文件：131.59 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
1N4150 | 封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE GEN PURP 50V 200MA DO35 分立半导体产品 二极管 - 整流器 - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
1N4150 | 封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：SIGNAL OR COMPUTER DIODE 分立半导体产品 二极管 - 整流器 - 单 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | |
1N4150 | Switchingdiode 文件：34.13 Kbytes Page：2 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | |
1N4150 | SmallSignalFastSwitchingDiodes 文件：101.81 Kbytes Page：3 Pages | VishayVishay Siliconix 威世科技 | | |
1N4150 | SmallSignalSwitchingDiodes 文件：137.44 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
1N4150 | 200mAAxialLeadedFastSwitchingDiode 文件：144 Kbytes Page：2 Pages | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | |
1N4150 | High-speedswitchingdiode 文件：128.05 Kbytes Page：3 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | |
1N4150 | Switchingdiode 文件：34.13 Kbytes Page：2 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | |
1N4150 | Fastswitichingspeed 文件：818.27 Kbytes Page：1 Pages | Surge SURGE COMPONENTS |  | |
FASTSWITCHINGSURFACEMOUNTDIODES FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •LeadfreeincompliancewithEURoHS2011/65/EUdirective | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | | |
FASTSWITCHINGSURFACEMOUNTDIODES FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •LeadfreeincompliancewithEURoHS2011/65/EUdirective | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | | |
FASTSWITCHINGSURFACEMOUNTDIODES FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •LeadfreeincompliancewithEURoHS2011/65/EUdirective | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | | |
FASTSWITCHINGSURFACEMOUNTDIODES FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •LeadfreeincompliancewithEURoHS2011/65/EUdirective | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | | |
FASTSWITCHINGSURFACEMOUNTDIODES FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •LeadfreeincompliancewithEURoHS2011/65/EUdirective | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | | |
SmallSignalFastSwitchingDiodes FEATURES •Siliconepitaxialplanardiode •Lowforwardvoltagedrop •Highforwardcurrentcapability •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Highspeedswitchandgeneralpurposeuseincomputer andindustrialapplica | VishayVishay Siliconix 威世科技 | | | |
200mALowPower,Switching
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N4150产品属性
- 类型
描述
- 型号
1N4150
- 功能描述
二极管 - 通用，功率，开关 Vr/50V Io/200mA BULK
- RoHS
否
- 制造商
STMicroelectronics
- 产品
Switching Diodes
- 峰值反向电压
600 V
- 正向连续电流
200 A
- 最大浪涌电流
800 A
- 恢复时间
2000 ns
- 正向电压下降
1.25 V
- 最大反向漏泄电流
300 uA
- 安装风格
SMD/SMT
- 封装/箱体
ISOTOP
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAYSMALLSIGNAL |
21+ |
NA |
36000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
VISHAY/威世 |
23+ |
SOD-123 |
50000 |
原装正品 支持实单 |
|||
VISHAY |
23+ |
SMD |
8650 |
全新原装现货 热卖优势库存 |
|||
ROHM/罗姆 |
24+ |
DO35 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
VISHAY/威世 |
2023+ |
SOD123 |
2356 |
原厂全新正品旗舰店优势现货 |
|||
VISHAY-威世 |
24+25+/26+27+ |
SOD-123 |
36218 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Microsemi/美高森美 |
22+ |
DO213AA |
2897 |
只做原装自家现货供应! |
|||
Microchip |
23+ |
DO-213AA |
53777 |
确保原装正品,一站式配单-认准水星电子。 |
|||
MICROCHIP |
23+ |
DO213AA |
500 |
正规渠道,只有原装! |
|||
MSV/萌盛微 |
23+ |
SOD123 |
50000 |
全新原装正品现货,支持订货 |
1N4150芯片相关品牌
1N4150规格书下载地址
1N4150参数引脚图相关
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- 1N4152W
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- 1N4152
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- 1N4150W-HE3-08
- 1N4150W-E3-18
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- 1N4149TR
- 1N4149
- 1N4148X-TP-CUTTAPE
- 1N4148X-TP
- 1N4148X
- 1N4148WX-TP
- 1N4148WTQ-7
- 1N4148W-TP
- 1N4148WT-7/BKN
- 1N4148WT-7
- 1N4148WT
- 1N4148WS-HE3-18
- 1N4148WS-HE3-08
- 1N4148WS-G3-18
- 1N4148WS-G3-08
- 1N4148WSFL-G3-08
- 1N4148WSF-7
- 1N4148WS-E3-18
- 1N4148WS-E3-08
- 1N4148WS-7-F
- 1N4148WS-13-F
- 1N4148W
- 1N4148T
- 1N4148S
- 1N4148M
- 1N4148L
- 1N4148G
- 1N4148D
- 1N4148_
- 1N4148
- 1N4147
- 1N4146
- 1N4145
- 1N4144
- 1N4143
- 1N4142
- 1N4141
- 1N4140
- 1N413B
1N4150数据表相关新闻
1N4746A
进口代理
2022-8-291N4148WS CJ/长电 SOD323 支持原装现货订货，欢迎咨询
1N4148WSCJ/长电SOD323
2021-3-81N4749A
1N4749A，当天发货0755-82732291全新原装现货或门市自取.
2020-11-41N4148WS T4
商品目录开关二极管 反向恢复时间（trr）4ns 直流反向耐压（Vr）100V 平均整流电流（Io）150mA 正向压降（Vf）1.25V@150mA
2020-10-261N4148W-7-F
製造商:DiodesIncorporated 產品類型:二極管-通用、電源、開關 RoHS:詳細資料 產品:SwitchingDiodes 安裝風格:SMD/SMT 封裝/外殼:SOD-123 峰值反向電壓:100V 最大衝擊電流:2A If-順向電流:300mA 配置:Single 恢復時間:4ns Vf-順向電壓:1.25V Ir-反向電流:1uA 最低
2020-10-151N4729A公司大量全新现货随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-2-28
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