丝印代码：16N50C3；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages

丝印代码：16N50C3；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages

丝印代码：16N50C3；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes Page：14 Pages

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

500V N-Channel MOSFET

500V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 400mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is

SMPS MOSFET

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