SCHOTTKY RECTIFIER

175C TJ operation Isolated heatsink Low profile, high current package Center tap module Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long

包装：散装 描述：PWR XFMR LAMINATED 0.63VA CHAS 变压器 电源变压器

OPEN STYLE FILAMENT L.V RECTIFLER USE TRANSFORMERS

文件：237.22 Kbytes Page：2 Pages

OPEN STYLE FILAMENT L.V RECTIFLER USE TRANSFORMERS

文件：237.22 Kbytes Page：2 Pages

包装：散装 描述：PWR XFMR LAMINATED 2.04VA CHAS 变压器 电源变压器

电源变压器

电源变压器

OPEN STYLE FILAMENT L.V RECTIFLER USE TRANSFORMERS

文件：237.22 Kbytes Page：2 Pages

SCHOTTKY RECTIFIER

文件：140.8 Kbytes Page：4 Pages

功率模块

Silicon MOS IC

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)