型号 功能描述 生产厂家 企业 LOGO 操作
155T

D.C. Reactors or Filter Chokes, Low to Medium Current

文件:181.16 Kbytes Page:1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Boxed Metallized Polypropylene film capacitors

文件:231.41 Kbytes Page:3 Pages

ILLINOISCAPACITOR

85C Low Leakage Axial Lead Aluminum Electrolytic Capacitors

文件:187.44 Kbytes Page:2 Pages

ILLINOISCAPACITOR

85째C Low Leakage Axial Lead Aluminum Electrolytic Capacitors

文件:89.44 Kbytes Page:3 Pages

ILLINOISCAPACITOR

Low Leakage current 2000 hours

文件:160.7 Kbytes Page:2 Pages

ILLINOISCAPACITOR

封装/外壳:轴向,CAN 包装:散装 描述:CAP ALUM 1.5UF 20% 50V AXIAL 电容器 铝电解电容器

CDE

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

PHILIPS

飞利浦

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

PANASONIC

松下

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package

NEC

瑞萨

155T产品属性

  • 类型

    描述

  • 型号

    155T

  • 制造商

    Hammond Manufacturing

  • 功能描述

    D.C. filter choke/open bracket

更新时间:2026-3-15 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HARVATEK
25+23+
1210
29303
绝对原装正品全新进口深圳现货
KDS晶振/日本大真空
23+
SMD
10000
优势货源原装正品
NA
2447
QFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SILICON
06+
QFN
4978
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TAITIEN
2225+
SMD
23
上传都是百分之百进口原装现货
IR
23+
TO247
32000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
SILICON
23+
QFN
50000
全新原装正品现货,支持订货
SRE/PERICOM
2025+
PERICOM
1000
EPSON
QFN
300
一级代理 原装正品假一罚十价格优势长期供货
EPSON
23+
SMD晶振
20000
全新原装假一赔十

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