GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package