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型号 功能描述 生产厂家 企业 LOGO 操作
UPG155TB

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package

NEC

瑞萨

UPG155TB

L, S Band SPDT GaAs MMIC Switch

文件:36.44 Kbytes Page:4 Pages

NEC

瑞萨

UPG155TB

L-BAND SPDT SWITCH

RENESAS

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package

NEC

瑞萨

L, S Band SPDT GaAs MMIC Switch

文件:36.44 Kbytes Page:4 Pages

NEC

瑞萨

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

PHILIPS

飞利浦

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

PANASONIC

松下

UPG155TB产品属性

  • 类型

    描述

  • 型号

    UPG155TB

  • 功能描述

    RF 开关 IC L S Band SPDT Switch

  • RoHS

  • 制造商

    M/A-COM Technology Solutions

  • 开关数量

    Single

  • 开关配置

    SPDT

  • 介入损耗

    0.6 dB

  • 截止隔离(典型值)

    43 dB

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PQFN-16

  • 封装

    Reel

更新时间:2026-7-31 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
SOT-363
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC
25+
原厂封装
32500
原装正品,欢迎询价
NEC
23+
Sot-363
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
NEC
23+
SOT-363
3959
全新原装正品现货,支持订货
NEC
25+
11
公司优势库存 热卖中!
NEC
25+
2987
只售原装自家现货!诚信经营!欢迎来电!
NEC
22+
SOT-363
20000
公司只做原装 品质保证
NEC
25+23+
New
31585
绝对原装正品现货,全新深圳原装进口现货
NEC
26+
SOP
6868
原装现货,可开13%税票
NEC
23+
TO-59
8510
原装正品代理渠道价格优势

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