| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF |   | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SMPS MOSFET 文件：3.72818 Mbytes Page：10 Pages | KERSEMI | | ||
N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
21+ |
TO-252 |
20000 |
全新原装公司现货
|
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
2023+ |
TO-252 |
12000 |
全新原装正品,优势价格 |
|||
Infineon(英飞凌) |
21+ |
盘装 |
59050 |
原装现货,假一罚十 |
|||
NK/南科功率 |
2025+ |
TO-252-2 |
986966 |
国产 |
|||
IR |
1923+ |
TO-252 |
5000 |
正品原装品质假一赔十 |
|||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
||||
IR/国际整流器 |
2511 |
TO-252-2 |
12800 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
159978 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
13N20规格书下载地址
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DdatasheetPDF页码索引
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