| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF |   | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SMPS MOSFET 文件：3.72818 Mbytes Page：10 Pages | KERSEMI | | ||
N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-252 |
22000 |
原装现货假一罚十 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
159978 |
明嘉莱只做原装正品现货 |
|||
IR |
25+23+ |
TO-252 |
27951 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
TO-252 |
8964 |
只做原装假一赔十 |
|||
IR |
24+ |
TO-252 |
39 |
||||
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
NEW |
TO-252 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
VB |
23+ |
TO-252 |
8000 |
只做原装现货 |
|||
VB |
23+ |
TO-252 |
7000 |
13N20规格书下载地址
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DdatasheetPDF页码索引
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