| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PowerMOSFET(Vdss=200V,Rds(on)max=0.235ohm,Id=13A) Benefits •LowGatetoDrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
PowerMOSFET(Vdss=200V,Rds(on)max=0.235ohm,Id=13A) Benefits •LowGatetoDrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor 文件：335.82 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SMPSMOSFET 文件：3.72818 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
N-ChannelMOSFETTransistor 文件：335.82 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2021+ |
TO-252 |
18405 |
原装进口假一罚十 |
|||
IR |
23+ |
TO-252 |
22000 |
原装现货假一罚十 |
|||
Infineon(英飞凌) |
23+ |
TO-252 |
16316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
IR |
23+ |
TO-252 |
35890 |
||||
ir |
22+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
IR |
21+ |
TO-252 |
12588 |
原装正品,自己库存 假一罚十 |
|||
VB |
23+ |
TO-252 |
8000 |
只做原装现货 |
|||
IR |
2024+实力库存 |
TO-252 |
25 |
只做原厂渠道 可追溯货源 |
|||
IR |
22+23+ |
TO-252 |
27951 |
绝对原装正品全新进口深圳现货 |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
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DdatasheetPDF页码索引
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