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型号	功能描述	生产厂家企业	LOGO
IMBG120R008M2H	丝印代码：12M2H008；CoolSiC™ 1200 V SiC MOSFET G2 Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 144 A at TC = 100°C • RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMBG120R012M2H	丝印代码：12M2H012；CoolSiC™ 1200 V SiC MOSFET G2 Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 102 A at TC = 100°C • RDS(on) = 12.2 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against para	INFINEON 英飞凌	INFINEON
IMBG120R017M2H	丝印代码：12M2H017；CoolSiC™ 1200 V SiC MOSFET G2 Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 76 A at TC = 100°C • RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMBG120R022M2H	丝印代码：12M2H022；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 62 A at TC = 100°C • RDS(on) = 21.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMBG120R026M2H	丝印代码：12M2H026；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 53 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMBG120R034M2H	丝印代码：12M2H034；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 43 A at TC = 100°C • RDS(on) = 34 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
IMBG120R040M2H	丝印代码：12M2H040；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 36 A at TC = 100°C • RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMBG120R053M2H	丝印代码：12M2H053；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 29 A at TC = 100°C • RDS(on) = 52.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMBG120R078M2H	丝印代码：12M2H078；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 21 A at TC = 100°C • RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMBG120R116M2H	丝印代码：12M2H234；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 15 A at TC = 100°C • RDS(on) = 115.7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against para	INFINEON 英飞凌	INFINEON
IMBG120R181M2H	丝印代码：12M2H181；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 10.5 A at TC = 100°C • RDS(on) = 181.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against pa	INFINEON 英飞凌	INFINEON
IMBG120R234M2H	丝印代码：12M2H234；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 6.2 A at TC = 100°C • RDS(on) = 233.9 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against par	INFINEON 英飞凌	INFINEON
IMCQ120R007M2H	丝印代码：12M2H007；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 181 A at TC = 100°C • RDS(on) = 7.5 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMCQ120R010M2H	丝印代码：12M2H010；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 138 A at TC = 100°C • RDS(on) = 10 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasi	INFINEON 英飞凌	INFINEON
IMCQ120R017M2H	丝印代码：12M2H017；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 84 A at TC = 100°C • RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMCQ120R026M2H	丝印代码：12M2H026；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 58 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMCQ120R034M2H	丝印代码：12M2H034；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 45 A at TC = 100°C • RDS(on) = 34 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
IMCQ120R040M2H	丝印代码：12M2H040；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 39 A at TC = 100°C • RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMCQ120R053M2H	丝印代码：12M2H053；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 31 A at TC = 100°C • RDS(on) = 52.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras	INFINEON 英飞凌	INFINEON
IMSQ120R012M2HH	丝印代码：12M2H012；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 89 A at TC = 100°C • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Internal layout optimized for fast switching • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold vo	INFINEON 英飞凌	INFINEON
IMSQ120R026M2HH	丝印代码：12M2H026；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 59 A at TC = 100°C • RDS(on) = 26 mΩ at VGS = 18 V, Tvj = 25°C • Internal layout optimized for fast switching • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold vo	INFINEON 英飞凌	INFINEON
IMSQ120R040M2HH	丝印代码：12M2H040；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 40 A at TC = 100°C • RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C • Internal layout optimized for fast switching • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold vo	INFINEON 英飞凌	INFINEON
IMZC120R012M2H	丝印代码：12M2H012；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 91 A at TC = 100°C • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
IMZC120R017M2H	丝印代码：12M2H017；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 69 A at TC = 100°C • RDS(on) = 17 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
IMZC120R022M2H	丝印代码：12M2H022；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 57 A at TC = 100°C • RDS(on) = 22 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
IMZC120R026M2H	丝印代码：12M2H026；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 49 A at TC = 100°C • RDS(on) = 25 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
IMZC120R034M2H	丝印代码：12M2H034；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 39 A at TC = 100°C • RDS(on) = 34 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
IMZC120R040M2H	丝印代码：12M2H040；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 34 A at TC = 100°C • RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
IMZC120R053M2H	丝印代码：12M2H053；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 27 A at TC = 100°C • RDS(on) = 53 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
IMZC120R078M2H	丝印代码：12M2H078；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 20 A at TC = 100°C • RDS(on) = 78 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit	INFINEON 英飞凌	INFINEON
12M2001FF	NTC Thermistors,Coated 文件：96 Kbytes Page：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001FF	NTC Thermistors, Radial Leaded and Coated 文件：91.48 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001FP	NTC Thermistors, Radial Leaded and Coated 文件：91.48 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001FP	NTC Thermistors,Coated 文件：96 Kbytes Page：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001JF	NTC Thermistors, Radial Leaded and Coated 文件：91.48 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001JF	NTC Thermistors,Coated 文件：96 Kbytes Page：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001JP	NTC Thermistors, Radial Leaded and Coated 文件：91.48 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001JP	NTC Thermistors,Coated 文件：96 Kbytes Page：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001KF	NTC Thermistors, Radial Leaded and Coated 文件：91.48 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001KF	NTC Thermistors,Coated 文件：96 Kbytes Page：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001KP	NTC Thermistors, Radial Leaded and Coated 文件：91.48 Kbytes Page：5 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M2001KP	NTC Thermistors,Coated 文件：96 Kbytes Page：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
12M20P2/49SMT	无源晶振	YIC 裕中	YIC
12M20P2/49US	封装/外壳：HC-49/US 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：CRYSTAL 12MHZ 20PF DIP 晶体，振荡器，谐振器晶体	YIC 裕中	YIC
12M20P2/49US	无源晶振	YIC 裕中	YIC
12M20P2/XT324-10/10	封装/外壳：4-SMD，无引线包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：CRYSTAL 12MHZ 20PF SMD 3.2X2.5MM 晶体，振荡器，谐振器晶体	YIC 裕中	YIC
SML-P12M2T	Ultra compact, thin size PICOLED™ - eco/PICOLED™ 1006（0402） 1.0×0.6mm（t=0.2mm） Features ・Ultra compact, thin size 1.0×0.6mm ・Thinnest size in the world＊t=0.2mm ・ Original device technology enables high brightness and high reliability ・Accomplishes low power consuming application ・Specific	ROHM 罗姆	ROHM
KEPFN-12M2	Plug-in Signal Conditioners K-UNIT 文件：123.04 Kbytes Page：4 Pages	MSYSTEM 爱模	MSYSTEM
KEPFN-12M2/Q	Plug-in Signal Conditioners K-UNIT 文件：123.04 Kbytes Page：4 Pages	MSYSTEM 爱模	MSYSTEM
KEPFN-12M2W	Plug-in Signal Conditioners K-UNIT 文件：123.04 Kbytes Page：4 Pages	MSYSTEM 爱模	MSYSTEM
KEPFN-12M2W/Q	Plug-in Signal Conditioners K-UNIT 文件：123.04 Kbytes Page：4 Pages	MSYSTEM 爱模	MSYSTEM

12M2产品属性

类型
描述
常温频差：
±30ppm
外接负载电容：
20pF
频率稳定度(全温)：
±30ppm
等效串联电阻(ESR)：
50Ω
工作温度：
-20℃~+70℃

12M2供应商更多...

更新时间：2026-5-25 10:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宇集芯电子有限公司	IMB0105S05	XP Power	25+	N/A	12000	一级代理保证进口原装正品假一罚十价格合理	询价
深圳市东来宝电子科技有限公司	IMB06C	TE/泰科	24+	SMD	21574	郑重承诺只做原装进口现货	询价
深圳市宇创芯科技有限公司	IMB02HS-GS02BL	ATTENTICN	24+	QFN	9600	原装现货,优势供应,支持实单!	询价
深圳市骏创达科技有限公司	IMB06CGR	TE/泰科	2608+	/	273494	一级代理，原装现货	询价
深圳市福安瓯科技有限公司	IMB04368CXLBB	IBM	25+	BGA	500	原装现货热卖中,提供一站式真芯服务	询价
深圳市河锋鑫科技有限公司	IMB02HS-GS02BL	ATTENTICN	SMD	22+	6000	十年配单,只做原装	询价
深圳市原品电子科技有限公司	IMB08-02BNSVU2S	SICK	23+	SENSOR	128	全新、原装	询价
深圳市湘达电子科技有限公司	IMB02HS-GS02BL	ATTENTICN	22+		3800	只做原装,价格优惠,长期供货。	询价
深圳市华斯顿科技有限公司	IMB02HS-GS02BL	ATTENTICN	25+23+		44484	绝对原装正品全新进口深圳现货	询价
瀚佳科技(深圳)有限公司	IMB02HS-GS02BL	ATTENTICN	24+		36500	一级代理/放心采购	询价

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12M2产品属性

12M2供应商更多...

12M2芯片相关品牌

12M2规格书下载地址

12M2参数引脚图相关

12M2数据表相关新闻

12CWQ04FN有货就只有原装

1269

12N30L-TO252R-TZ1G_UTC代理商

12-MMF-002-5-F 全新原装

1-2834331-1

12N10

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