CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 49 A at TC = 100°C • RDS(on) = 25 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit

CoolSiC ™ MOSFET 分立器件 1200 V G2，采用 TO-247 4 引脚高爬电距离封装

CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 53 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 58 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 59 A at TC = 100°C • RDS(on) = 26 mΩ at VGS = 18 V, Tvj = 25°C • Internal layout optimized for fast switching • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold vo