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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IMBG120R022M2H | CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 62 A at TC = 100°C • RDS(on) = 21.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras | Infineon 英飞凌 |   | |
CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 57 A at TC = 100°C • RDS(on) = 22 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INFINEON/英飞凌 |
24+ |
TO-263-7 |
60000 |
||||
INFINEON |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271731邹小姐 |
|||
Infineon Technologies |
23+ |
PG-TO263-7 |
3652 |
原厂正品现货供应SIC全系列 |
|||
INFINEON |
23+ |
GOOP |
7000 |
||||
Infineon(英飞凌) |
24+ |
TO2637 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
INFINEON/英飞凌 |
23+ |
TO-263-7 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
IMBG120R022M2H芯片相关品牌
IMBG120R022M2H规格书下载地址
IMBG120R022M2H参数引脚图相关
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IMBG120R022M2H数据表相关新闻
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DdatasheetPDF页码索引
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