Features

• VDSS = 1200 V at Tvj = 25°C

• IDDC = 89 A at TC = 100°C

• RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C

• Internal layout optimized for fast switching

• Very low switching losses

• Overload operation up to Tvj = 200°C

• Short circuit withstand time 2 μs

• Benchmark gate threshold voltage, VGS(th) = 4.2 V

• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied

• Robust body diode for hard commutation

• .XT interconnection technology for best-in-class thermal performance

• Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder