1270nm Edge Emitting Narrow Farfield DFB Laser

The 127D-02x-VCT11-xxx Products are directly modulated 2.5Gbps 1270nm Narrow Farfield (NFF) DFB laser diode chips. These products utilize a patented Etched Facet Technology enabling low cost. Product is available as tested die package in blue tape or gel pack.    \b

10G Hi-BW 1270nm CWDM DFB LD (WL -3.5/+2.5nm)

The 127D-10G-LCG11-S is a directly modulated 10Gbps CWDM DFB laser diode chip with operating temperature range from –5°C to 85°C. This part utilizes a patented Etched Facet Technology that enables high performance and product uniformity, and is available as tested die. ·CWDM wavelength\n·Direct modulation up to 10Gbps\n·Uncooled operation\n·Edge emitting laser (EEL)\n·RoHS compliant and Design for Telcordia GR-468;

10G Hi-BW 1270nm DFB TO-Can

The 127D-10G-LT5RC-S is a directly modulated 10Gbps 1270nm DFB laser diode in a hermetic TO-56 package with Aspherical lens (7.5 FL), and pin-out C. It utilizes a patented Etched Facet Technology that enables high performance and product uniformity. ·1270 nm wavelength\n·Direct modulation up to 10Gbps\n·Uncooled operation, -5°C to 85°C operating temp range\n·Edge emitting laser (EEL)\n·RoHS compliant\n·Design for Telcordia GR-468\n·TO-56 package with lens options;

Radial lead capacitor

FEATURES ● Very fast charge/discharge ● High power density ● IEC 62391 compliant ● Circuit board mountable APPLICATIONS ● Battery backup/ alternative ● Pulse power ● Energy harvesting ● LED Displays ● Mechanical actuators ● Audio systems

Radial Leaded Super Capacitors

FEATURES ● Very fast charge/discharge ● High power density ● IEC 62391 compliant ● Circuit board mountable APPLICATIONS ● Battery backup/ alternative ● Pulse power ● Energy harvesting ● LED Displays ● Mechanical actuators ● Audio systems

Small size - High voltage - General purpose

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Metallized Polypropylene Film Capacitors

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封装/外壳：径向，Can - 卡入式 包装：散装 描述：CAP 120F -20% +50% 2.3V T/H 电容器 双电层电容器（EDLC），超级电容器

High Capacitance ??Very fast charge/discharge ??High power density

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Very fast charge/discharge ??High power density ??IEC 62391

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Super capacitor

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PLASTIC SILICON RECTIFIER(VOLTAGE - 1250 to 1600 Volts CURRENT - 1.0 Ampere)

PLASTIC SILICON RECTIFIERS VOLTAGE 1250 to 1600 Volts CURRENT 1.0 Ampere FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

Germanium PNP Transistor Horizontal Output Amplifier

Germanium PNP Transistor Horizontal Output Amplifier

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon epitaxial planar type

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