120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: • 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing • Common source, Class AB, 50 V bias voltage • High efficiency: >60 typical across the frequency band • Extrem

封装/外壳：55-QQ 包装：卷带（TR） 描述：TRAN, GAN, 1200-1400 MHZ, 120W, 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: • 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing • Common source, Class AB, 50 V bias voltage • High efficiency: >60 typical across the frequency band • Extrem

120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: • 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing • Common source, Class AB, 50 V bias voltage • High efficiency: >60 typical across the frequency band • Extrem

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

RF/Microwave GaN on SiC Power Devices, Pallets and Modules