Key Features

The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products:

• 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing

• Common source, Class AB, 50 V bias voltage

• High efficiency: >60 typical across the frequency band

• Extremely compact size

• High power gain: >16.8 dB

• Excellent gain flatness

• Ideal for radar, L-Band avionics, communications, and industrial applications

• Utilizes all-gold metallization and eutectic die attach for highest reliability

• 50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available