丝印代码：120N30；N-Channel Enhancement Mode Power MOSFET

Description The RM120N30T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

丝印代码：120N30；N-Channel Super Trench Power MOSFET

文件：227.33 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive, D

GigaMOS Power MOSFET

GigaMOS™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • High Current Handling Capability • Fast Intrinsic Diode • Avalanche Rated • Low RDS(on) Advantages • Easy to Mount • Space Savings • High Power Density A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive ·AC Motor Drives ·Battery Charges

300V PDP IGBT

文件：746.24 Kbytes Page：9 Pages

300V, 120A PDP IGBT

文件：885.31 Kbytes Page：7 Pages