Description

The RM120N30T2 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

VDS =30V,ID =120A

RDS(ON) <3.5mΩ @ VGS=10V (Typ:3.0mΩ)

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free